Document
BFR 106
NPN Silicon RF Transistor • For low noise, high-gain amplifiers • For linear broadband amplifiers • Special application: antenna amplifiers • Complementary type: BFR 194 (PNP)
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFR 106 R7s Q62702-F1219 1=B 2=E 3=C 4=E
Package SOT-23
Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 15 20 20 3 100 12 mW 700 150 - 65 ... + 150 - 65 ... + 150 ≤ 110 °C mA Unit V
VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg
1)
TS ≤ 73 °C
Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point
RthJS
K/W
1) TS is measured on the collector lead at the soldering point to the pcb.
Semiconductor Group
1
Dec-11-1996
BFR 106
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit
V(BR)CEO
15 100 -
V µA 100 nA 100 µA 10 40 220
IC = 1 mA, IB = 0
Collector-emitter cutoff current
ICES ICBO IEBO hFE
VCE = 20 V, VBE = 0
Collector-base cutoff current
VCB = 10 V, IE = 0
Emitter-base cutoff current
VEB = 2 V, IC = 0
DC current gain
IC = 70 mA, VCE = 8 V
Semiconductor Group
2
Dec-11-1996
BFR 106
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. AC Characteristics Transition frequency Values typ. max. Unit
fT
3.5 5 0.95 0.25 4.4 -
GHz pF 1.5 dB 2.5 4 -
IC = 70 mA, VCE = 8 V, f = 500 MHz
Collector-base capacitance
Ccb Cce
-
VCB = 10 V, f = 1 MHz
Collector-emitter capacitance
VCE = 10 V, f = 1 MHz
Emitter-base capacitance
Ceb
-
VEB = 0.5 V, f = 1 MHz
Noise figure
F
IC = 20 mA, VCE = 8 V, ZS = ZSopt f = 900 MHz f = 1.8 GHz
Power gain
2)
Gma
IC = 70 mA, VCE = 8 V, ZS = ZSopt ZL = ZLopt f = 900 MHz f = 1.8 GHz
Transducer gain |S21e|2 10.5 5 12.5 7.5 -
IC = 70 mA, VCE = 8 V, ZS =ZL= 50 Ω f = 900 MHz f = 1.8 GHz
2) Gma = |S21/S12| (k-(k2-1)1/2)
Semiconductor Group
3
Dec-11-1996
BFR 106
SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 1.8998 fA VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 15 1.3235 4.1613 1.4602 1.0893 5.0933 35.78 62.059 0.81533 1.2466 0 3 V V Ω fF ps mA V ns -
BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC =
132.75 0.44125 11.407 1.2652 1.1351 0.85909 0.44444 0 0.46849 0 0 0.92887
A Ω Ω V deg fF -
NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM
0.89608 71.424 0.91008 2.0992 0.27485 0.69062 0.10681 2327.8 0.14496 0.75 1.11 300
fA fA Ω V fF V eV K
0.010016 A
0.028135 mA
All parameters are ready to use, no scalling is necessary. Extracted on behalf of SIEMENS Small Signal Semiconductors by: Institut für Mobil-und Satellitenfunktechnik (IMST) © 1996 SIEMENS AG
Package Equivalent Circuit: LBI = LBO = LEI = LEO = LCI = LCO = CBE = CCB = CCE = 0.85 0.51 0.69 0.61 0 0.43 73 84 165 nH nH nH nH nH nH fF fF fF
Valid up to 6 GHz For examples and ready to use parameters please contact your local Siemens distributor or sales office to obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm
Semiconductor Group
4
Dec-11-1996
BFR 106
Total power dissipation Ptot = f (TA*, TS)
* Package mounted on epoxy
800
mW
Ptot
600
TS
500
400
300
TA
200
100 0 0 20 40 60 80 100 120 °C 150 TA ,TS
Permissible Pulse Load RthJS = f (tp)
Permissible Pulse Load Ptotmax/PtotDC = f (tp)
10 3
10 2
K/W
RthJS
10 2
P totmax/PtotDC D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0
10 1
10 0 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
10 s 10 tp
-1
0
10 0 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
10 s 10 tp
-1
0
Semiconductor Group
5
Dec-11-1996
BFR 106
Collector-base capacitance Ccb = f (VCB) VBE = vbe = 0, f = 1MHz
Transition frequency fT = f (IC)
VCE = Parameter
3.2
6.0 GHz
pF 5.0
Ccb
2.4
fT
4.5 4.0 2.0 3.5 1.6 3.0 2.5 1.2 2.0 0.8 1.5 1.0 0.4 0.5 0.0 0 4 8 12 16 V VR 22 0.0 0 20 40 60 80
5V 3V 2V
1V 0.7V
mA IC
120
Power Gain Gma, Gms = f(IC)
f = 0.9GHz VCE = Parameter
14
Power Gain Gma, Gms = f(IC)
f = 1.8GHz VCE = Parameter
9.0
dB
10V 5V 3V
dB
G
10
G
7.0 6.0 5.0 4.0 3.0
5V 3V
2V 8
2V
6
4
1V 2.0
2 0.7V 0 0 20 40 60 80 mA IC 120 1.0 0.0 0 20 40 60 0.7V 80 mA IC 120 1V
Semiconductor Group
6
Dec-11-1996
BFR 106
Power Gain Gma, Gms = f(VCE):_____
|S21 |2 = f(VCE):---------
Intermodulation Intercept Point IP3=f(IC)
(3rd order, Output, ZS=ZL=50Ω)
f = Parameter
14
VCE = Parameter, f = 900MHz
36 0.9GHz dBm 8V 5V
IC=70mA
dB
G
10 0.9GHz
IP3
32 30 28
8 1.8GHz 6 1.8GHz 4
3V 26 24 22 20 18 2V
2 16 0 0 2 4 6 8 V 12 14 0 10 20 30 40
1V
50
60
70
V CE
80 mA 100 IC
Power Gain Gma, Gms = f(f)
VCE = Parameter
45.