BFR106

DISCRETE SEMICONDUCTORS DATA SHEET BFR106 NPN 5 GHz wideband transistor Product specification September 1995 NXP Semiconductors NPN 5 GHz wideband transistor Product specification BFR106 DESCRIPTION NPN silicon planar epitaxial transistor in a plastic SOT23 envelope. It is primarily intended for low noise, general RF applications. PINNING PIN DESCRIPTION Code: R7p 1 base 2 emitter 3 collector lfpage 3 1 Top view 2 MSB003 Fig.1 SOT23. QUICK REFERENCE DATA SYMBOL PARAMETER VCBO VCEO IC Ptot hFE fT collector-base voltage collector-emitter voltage DC collector current total power dissipation DC current gain transition frequency GUM maximum unilateral power gain Vo output voltage CONDITIONS open emitter open base up to Ts = 70 C; note 1 IC = 50 mA; VCE = 9 V; Tamb = 25 C IC = 50 mA; VCE = 9 V; f = 500 MHz; Tamb = 25 C IC = 30 mA; VCE = 6 V; f = 800 MHz; Tamb = 25 C IC = 50 mA; VCE = 9 V; RL = 75 ; Tamb = 25 C; dim = 60 dB; f(pqr) = 793.25 MHz MIN.     25    TYP.     80 5 11.5 350 MAX. 20 15 100 500     UNIT V V mA mW GHz dB mV LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS VCBO VCEO VEBO IC Ptot Tstg Tj collector-base voltage collector-emitter voltage emitter-base voltage DC collector current total power dissipation storage temperature junction temperature open emitter open base open collector up to Ts = 70 C; note 1 Note 1. Ts is the temperature at the soldering point ...