BFQ67W

DISCRETE SEMICONDUCTORS DATA SHEET BFQ67W NPN 8 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 8 GHz wideband transistor FEATURES High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is designed for wideband applications such as satellite TV tuners and RF portable communications equipment up to 2 GHz. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE fT GUM F PARAMETER collector-base voltage collector-emitter voltage DC collector current total power dissipation DC current gain transition frequency maximum unilateral power gain noise figure up to Ts = 118 °C; note 1 IC = 15 mA; VCE = 5 V; Tj = 25 °C IC = 15 mA; VCE = 8 V; f = 2 GHz; Tamb = 25 °C Ic = 15 mA; VCE = 8 V; f = 1 GHz; Tamb = 25 °C Ic = 5 mA; VCE = 8 V; f = 1 GHz open base CONDITIONS open emitter MIN. − − − − 60 − − − TYP. − − − − 100 8 13 1.3 1 2 3 PINNING PIN DESCRIPTION Code: V2 base emitter collector handbook, 2 columns BFQ67W 3 1 Top view 2 MBC870 Fig.1 SOT323. MAX. 20 10 50 300 − − − − UNIT V V mA mW GHz dB dB LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector tab. September 1995 2 PARAMETER collector-base voltage collector-emitter...