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BFQ621 Dataheets PDF



Part Number BFQ621
Manufacturers NXP
Logo NXP
Description NPN 7 GHz wideband transistor
Datasheet BFQ621 DatasheetBFQ621 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET BFQ621 NPN 7 GHz wideband transistor Product specification Supersedes data of 1995 Apr 11 File under Discrete Semiconductors, SC14 1995 Sep 26 Philips Semiconductors Product specification NPN 7 GHz wideband transistor FEATURES • High power gain • High output voltage • High maximum junction temperature • Gold metallization ensures excellent reliability. APPLICATIONS It is primarily intended for use in MATV and microwave amplifiers, such as aerial amplifiers, .

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DISCRETE SEMICONDUCTORS DATA SHEET BFQ621 NPN 7 GHz wideband transistor Product specification Supersedes data of 1995 Apr 11 File under Discrete Semiconductors, SC14 1995 Sep 26 Philips Semiconductors Product specification NPN 7 GHz wideband transistor FEATURES • High power gain • High output voltage • High maximum junction temperature • Gold metallization ensures excellent reliability. APPLICATIONS It is primarily intended for use in MATV and microwave amplifiers, such as aerial amplifiers, radar systems, oscilloscopes, spectrum analyzers, etc. PINNING PIN 1 2 3 4 collector emitter base emitter Fig.1 SOT172A2. DESCRIPTION Top view 2 MSA457 BFQ621 DESCRIPTION Silicon NPN transistor in a 4-lead dual-emitter SOT172A2 package with a ceramic cap. All leads are isolated from the mounting base. Emitter ballasting resistors and application of gold sandwich metallization ensures an optimum temperature profile and excellent reliability properties. handbook, halfpage 4 1 3 QUICK REFERENCE DATA SYMBOL VCEO IC Ptot hFE fT GUM VO PARAMETER collector-emitter voltage collector current (DC) total power dissipation DC current gain transition frequency maximum unilateral power gain output voltage up to Tmb = 25 °C IC = 120 mA; VCE = 18 V; Tamb = 25 °C IC = 120 mA; VCE = 18 V; f = 1 GHz; Tamb = 25 °C IC = 120 mA; VCE = 18 V; f = 500 MHz; Tamb = 25 °C IC = 120 mA; VCE = 18 V; f(p + q − r) = 793.25 MHz; dim = −60 dB; RL = 75 Ω WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. CONDITIONS open base − − − 40 − − − MIN. − − − − 7 18.5 1.2 TYP. MAX. 16 150 8 − − − − GHz dB V UNIT V mA W 1995 Sep 26 2 Philips Semiconductors Product specification NPN 7 GHz wideband transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature junction temperature up to Tmb = 25 °C CONDITIONS open emitter open base open collector − − − − − −65 − MIN. BFQ621 MAX. 25 16 2 150 8 +175 +200 V V V UNIT mA W °C °C THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER CONDITIONS VALUE 21.9 UNIT K/W thermal resistance from junction to mounting base Ptot = 8 W; up to Tmb = 25 °C 1995 Sep 26 3 Philips Semiconductors Product specification NPN 7 GHz wideband transistor CHARACTERISTICS Tj = 25 °C (unless otherwise specified). SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO hFE fT Cc Ce Cre GUM PARAMETER collector-base breakdown voltage emitter-base breakdown voltage collector-base leakage current DC current gain transition frequency collector capacitance emitter capacitance feedback capacitance maximum unilateral power gain; note 1 CONDITIONS IC = 0.1 mA; IE = 0 IE = 0.1 mA; IC = 0 IE = 0; VCB = 18 V IC = 50 mA; VCE = 10 V IC = 120 mA; VCE = 18 V; f = 1 GHz; see Fig.3 IE = ie = 0; VCB = 18 V; f = 1 MHz IC = ic = 0; VEB = 0.5 V; f = 1 MHz − − − − 50 − − − MIN. − − − − − 7 1.5 5 0.85 18.5 14.5 1.35 1.2 −60 −60 TYP. BFQ621 MAX. 25 16 2 100 160 − − − 1.2 − − − − − − UNIT V V V µA GHz pF pF pF dB dB V V dB dB collector-emitter breakdown voltage IC = 10 mA; IB = 0 IC = 0; VCE = 18 V; f = 1 MHz; − see Fig.4 IC = 120 mA; VCE = 18 V; f = 500 MHz; Tamb = 25 °C; IC = 120 mA; VCE = 18 V; f = 800 MHz; Tamb = 25 °C; − − − − − − VO d2 output voltage second order intermodulation distortion note 2 note 3 note 4 note 5 Notes s 21 2 1. GUM is the maximum unilateral power gain, assuming s12 is zero. G UM = 10 log -----------------------------------------------------------dB. ( 1 – s 11 2 ) ( 1 – s 22 2 ) 2. dim = −60dB (DIN45004B); see Fig.2; IC = 120 mA; VCE = 18 V; RL = 75 Ω; Tamb = 25 °C; Vp = VO; fp = 445.25 MHz; Vq = VO −6 dB; fq = 453.25 MHz; Vr = VO −6 dB; fr = 455.25 MHz; measured at f(p + q − r) = 443.25 MHz; see Fig.5. 3. dim = −60dB (DIN45004B); see Fig.2; IC = 120 mA; VCE = 18 V; RL = 75 Ω; Tamb = 25 °C; Vp = VO; fp = 795.25 MHz; Vq = VO −6 dB; fq = 803.25 MHz; Vr = VO −6 dB; fr = 805.25 MHz; measured at f(p + q − r) = 793.25 MHz; see Fig.6. 4. VO = 50 dBmV = 316 mV; IC = 90 mA; VCE = 18 V; RL = 75 Ω; Tamb = 25 °C; measured at f(p + q) = 450 MHz; see Fig.7. 5. VO = 50 dBmV = 316 mV; IC = 90 mA; VCE = 18 V; RL = 75 Ω; Tamb = 25 °C; measured at f(p + q) = 810 MHz; see Fig.8. 1995 Sep 26 4 Philips Semiconductors Product specification NPN 7 GHz wideband transistor MEA260 BFQ621 handbook, full pagewidth L2 10 nF 10 kΩ 240 Ω L5 10 nF L1 10 nF L4 L3 L6 10 nF 4.7 µF VCC VBB input 75 Ω 10 nF DUT 1 pF output 75 Ω 1 pF 3.


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