BFQ31A

SOT23 NPN SILICON PLANAR VHF/UHF TRANSISTOR ISSUE 4 – MARCH 2001 PARTMARKING DETAILS BFQ31A – S4 BFQ31AR – S5 BFQ31A C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Base Current Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO IC IB P tot T j:T stg VALUE 30 15 3 100 50 330 -55 to +150 UNIT V V V mA mA mW °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance Input Capacitance Noise Figure V (BR)CBO V (BR)CEO V (BR)EBO I CBO V CE(sat) V BE(sat) h FE fT C obo C ibo N 100 600 1.7 2.0 6.0 MHz pF pF dB 30 15 3 0.01 0.4 1.0 BFQ31A MAX. V V V I C=1.0 µ A, I E =0 I C=3mA, I B=0* I E=10 µ A, I C=0 V CB=15V, I E=0 I C=10mA, I B=1mA I C=10mA, I B=1mA I C=3mA, V CE=1V I C=4mA, V CE=10V f=100MHz V CB=10V, f=1MHz V CB=0.5V, f=1MHz I C=1mA, V CE=6V R s=400 Ω , f=60MHz UNIT CONDITIONS. µA V V *Measured under pulsed conditions. Spice parameter data is available upon request for this device TBA ...