BFQ251

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BFQ251 PNP video transistor Product specification Supersedes data of 1997 Oct 02 1998 Oct 06 Philips Semiconductors Product specification PNP video transistor FEATURES High breakdown voltages Low output capacitance High gain bandwidth Good thermal stability Gold metallization ensures excellent reliability. APPLICATIONS Buffer/driver in high-resolution colour graphics monitors. DESCRIPTION PNP video transistor in a SOT54 (TO-92) plastic package. NPN complement: BFQ231. PINNING BFQ251 page 1 2 3 MSB033 PIN 1 2 3 base DESCRIPTION collector emitter Fig.1 Simplified outline (SOT54; TO-92). QUICK REFERENCE DATA SYMBOL VCBO VCER IC Ptot hFE fT Note 1. Ts is the temperature at the soldering point of the collector pin, 4 mm from the body. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VCER VEBO IC Ptot Tstg Tj Notes 1. Ts is the temperature at the soldering point of the collector pin, 4 mm from the body. 2. Transistor mounted on a printed-circuit board with a metallized pad area of 10 mm2. PARAMETER collector-base voltage collector-emitter voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature junction temperature Ts ≤ 65 °C; notes 1 and 2; see Fig.3 open emitter open base RBE = 100 Ω open collector CONDITIONS − − − − − − −65 − MIN. MAX. −100 −65 −95 −3 −300 1 +150 150 V V V V mA W °C °C...