Document
DISCRETE SEMICONDUCTORS
DATA SHEET
BFQ232; BFQ232A NPN video transistors
Product specification Supersedes data of November 1995 File under Discrete Semiconductors, SC05 1997 Oct 02
Philips Semiconductors
Product specification
NPN video transistors
FEATURES • High breakdown voltages • Low output capacitance • Good thermal stability • Gold metallization ensures excellent reliability. APPLICATIONS • Buffer/driver in high-resolution colour graphics monitors. DESCRIPTION NPN video transistor in a SOT32 (TO-126) plastic package. PNP complements: BFQ252 and BFQ252A. PINNING PIN 1 2 3 DESCRIPTION emitter collector base
fpage
BFQ232; BFQ232A
Top view
1
2
3
MBC077 - 1
Fig.1
Simplified outline (SOT32; TO-126).
QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage BFQ232 BFQ232A VCER collector-emitter voltage BFQ232 BFQ232A IC Ptot hFE fT collector current (DC) total power dissipation DC current gain transition frequency BFQ232 BFQ232A Note 1. Ts is the temperature at the soldering point of the collector pin. Ts ≤ 115 °C; note 1; see Fig.3 IC = 50 mA; VCE = 10 V; Tamb = 25 °C IC = 50 mA; VCE = 10 V; f = 100 MHz; Tamb = 25 °C RBE = 100 Ω − − − − 20 1 0.8 − − − − 35 1.4 1.2 95 110 300 3 − − − GHz GHz V V mA W open emitter − − − − 100 115 V V CONDITIONS MIN. TYP. MAX. UNIT
1997 Oct 02
2
Philips Semiconductors
Product specification
NPN video transistors
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO PARAMETER collector-base voltage BFQ232 BFQ232A VCEO collector-emitter voltage BFQ232 BFQ232A VCER collector-emitter voltage BFQ232 BFQ232A VEBO IC Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector pin. THERMAL CHARACTERISTICS SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector pin. PARAMETER thermal resistance from junction to soldering point emitter-base voltage collector current (DC) total power dissipation storage temperature junction temperature Ts ≤ 115 °C; note 1; see Fig.3 open collector RBE = 100 Ω open base CONDITIONS open emitter
BFQ232; BFQ232A
MIN. − − − − − − − − − −65 −
MAX. 100 115 65 95 95 110 3 300 3 +175 175 V V V V V V V
UNIT
mA W °C °C
CONDITIONS Ts ≤ 115 °C; note 1
VALUE 20
UNIT K/W
1997 Oct 02
3
Philips Semiconductors
Product specification
NPN video transistors
CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL V(BR)CBO BFQ232 BFQ232A V(BR)CEO collector-emitter breakdown voltage IC = 10 mA; IB = 0 BFQ232 BFQ232A V(BR)CER collector-emitter breakdown voltage IC = 10 mA; RBE = 100 Ω BFQ232 BFQ232A V(BR)EBO ICES ICBO hFE fT emitter-base breakdown voltage collector-emitter cut-off current collector-base cut-off current DC current gain transition frequency BFQ232 BFQ232A Ccb collector-base capacitance IE = 0.1 mA; IC = 0 IB = 0; VCE = 50 V IE = 0; VCB = 50 V IC = 50 mA; VCE = 10 V; Tamb = 25 °C; see Fig.4 IC = 50 mA; VCE = 10 V; f = 100 MHz; Tamb = 25 °C; see Fig.6 IC = 0; VCB = 10 V; f = 1 MHz; Tamb = 25 °C; see Fig.5 PARAMETER collector-base breakdown voltage CONDITIONS IC = 0.1 mA; IE = 0
BFQ232; BFQ232A
MIN. 100 115 65 95 95 110 3 − − 20
TYP. − − − − − − − − − 35
MAX. − − − − − − − 100 20 −
UNIT V V V V V V V µA µA
1 0.8 −
1.4 1.2 2
− − −
GHz GHz pF
handbook, halfpage
400
MBB880
handbook, halfpage
4
MBB895
IC (mA) 300
Ptot (W) 3
200
2
100
1
0
0
20
40
60
80 VCEO (V)
0 0 50 100 150 Ts (oC) 200
Fig.2 DC SOAR.
Fig.3 Power derating curve.
1997 Oct 02
4
Philips Semiconductors
Product specification
NPN video transistors
BFQ232; BFQ232A
MBB434
handbook, halfpage
50
handbook, halfpage
6
MBB879
hFE
Ccb (pF) 5
40 4
3 30 2
20 0 100 200 IC (mA) 300
1 0 10 20 30 VCB (V) 40
VCE = 10 V; Tamb = 25 °C.
f = 1 MHz; Tamb = 25 °C.
Fig.4
DC current gain as a function of collector current; typical values.
Fig.5
Collector-base capacitance as a function of collector-base voltage; typical values.
handbook, halfpage
2.0
MBB881
fT (GHz)
1.5
BFQ232A 1.0
BFQ232
0.5
0
50
100
IC (mA)
150
VCE = 10 V; f = 100 MHz; Tamb = 25 °C.
Fig.6
Transition frequency as a function of collector current; typical values.
1997 Oct 02
5
Philips Semiconductors
Product specification
NPN video transistors
PACKAGE OUTLINE
BFQ232; BFQ232A
Plastic single-ended leaded (through hole) package; mountable to heatsink, 1 mounting hole; 3 leads SOT32
E
A
P1 P D
L1
L
1 bp
2 w M
3 c Q e e1
0
2.5 scale
5 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 2.7 2.3 bp 0.88 0.65 c 0.60 0.45 D 11.1 10.5 E 7.8 7.2 e 4.58 e1 2.29 L 16.5 15.3 L1(1) max 2.54 Q 1.5 0.9 P 3.2 3.0 P1 3.9 3.6 w 0.254
Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT32 REFERENCES IEC JEDEC TO-126 EIAJ EUROPEAN PROJECTION ISSUE DATE 97-03-04
1997 Oct 02
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Philips Semiconductors
Product specification
NPN video transistors
DEFINITIONS Data sheet status Objective spe.