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BFQ232 Dataheets PDF



Part Number BFQ232
Manufacturers NXP
Logo NXP
Description NPN video transistors
Datasheet BFQ232 DatasheetBFQ232 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET BFQ232; BFQ232A NPN video transistors Product specification Supersedes data of November 1995 File under Discrete Semiconductors, SC05 1997 Oct 02 Philips Semiconductors Product specification NPN video transistors FEATURES • High breakdown voltages • Low output capacitance • Good thermal stability • Gold metallization ensures excellent reliability. APPLICATIONS • Buffer/driver in high-resolution colour graphics monitors. DESCRIPTION NPN video transistor in a .

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DISCRETE SEMICONDUCTORS DATA SHEET BFQ232; BFQ232A NPN video transistors Product specification Supersedes data of November 1995 File under Discrete Semiconductors, SC05 1997 Oct 02 Philips Semiconductors Product specification NPN video transistors FEATURES • High breakdown voltages • Low output capacitance • Good thermal stability • Gold metallization ensures excellent reliability. APPLICATIONS • Buffer/driver in high-resolution colour graphics monitors. DESCRIPTION NPN video transistor in a SOT32 (TO-126) plastic package. PNP complements: BFQ252 and BFQ252A. PINNING PIN 1 2 3 DESCRIPTION emitter collector base fpage BFQ232; BFQ232A Top view 1 2 3 MBC077 - 1 Fig.1 Simplified outline (SOT32; TO-126). QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage BFQ232 BFQ232A VCER collector-emitter voltage BFQ232 BFQ232A IC Ptot hFE fT collector current (DC) total power dissipation DC current gain transition frequency BFQ232 BFQ232A Note 1. Ts is the temperature at the soldering point of the collector pin. Ts ≤ 115 °C; note 1; see Fig.3 IC = 50 mA; VCE = 10 V; Tamb = 25 °C IC = 50 mA; VCE = 10 V; f = 100 MHz; Tamb = 25 °C RBE = 100 Ω − − − − 20 1 0.8 − − − − 35 1.4 1.2 95 110 300 3 − − − GHz GHz V V mA W open emitter − − − − 100 115 V V CONDITIONS MIN. TYP. MAX. UNIT 1997 Oct 02 2 Philips Semiconductors Product specification NPN video transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO PARAMETER collector-base voltage BFQ232 BFQ232A VCEO collector-emitter voltage BFQ232 BFQ232A VCER collector-emitter voltage BFQ232 BFQ232A VEBO IC Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector pin. THERMAL CHARACTERISTICS SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector pin. PARAMETER thermal resistance from junction to soldering point emitter-base voltage collector current (DC) total power dissipation storage temperature junction temperature Ts ≤ 115 °C; note 1; see Fig.3 open collector RBE = 100 Ω open base CONDITIONS open emitter BFQ232; BFQ232A MIN. − − − − − − − − − −65 − MAX. 100 115 65 95 95 110 3 300 3 +175 175 V V V V V V V UNIT mA W °C °C CONDITIONS Ts ≤ 115 °C; note 1 VALUE 20 UNIT K/W 1997 Oct 02 3 Philips Semiconductors Product specification NPN video transistors CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL V(BR)CBO BFQ232 BFQ232A V(BR)CEO collector-emitter breakdown voltage IC = 10 mA; IB = 0 BFQ232 BFQ232A V(BR)CER collector-emitter breakdown voltage IC = 10 mA; RBE = 100 Ω BFQ232 BFQ232A V(BR)EBO ICES ICBO hFE fT emitter-base breakdown voltage collector-emitter cut-off current collector-base cut-off current DC current gain transition frequency BFQ232 BFQ232A Ccb collector-base capacitance IE = 0.1 mA; IC = 0 IB = 0; VCE = 50 V IE = 0; VCB = 50 V IC = 50 mA; VCE = 10 V; Tamb = 25 °C; see Fig.4 IC = 50 mA; VCE = 10 V; f = 100 MHz; Tamb = 25 °C; see Fig.6 IC = 0; VCB = 10 V; f = 1 MHz; Tamb = 25 °C; see Fig.5 PARAMETER collector-base breakdown voltage CONDITIONS IC = 0.1 mA; IE = 0 BFQ232; BFQ232A MIN. 100 115 65 95 95 110 3 − − 20 TYP. − − − − − − − − − 35 MAX. − − − − − − − 100 20 − UNIT V V V V V V V µA µA 1 0.8 − 1.4 1.2 2 − − − GHz GHz pF handbook, halfpage 400 MBB880 handbook, halfpage 4 MBB895 IC (mA) 300 Ptot (W) 3 200 2 100 1 0 0 20 40 60 80 VCEO (V) 0 0 50 100 150 Ts (oC) 200 Fig.2 DC SOAR. Fig.3 Power derating curve. 1997 Oct 02 4 Philips Semiconductors Product specification NPN video transistors BFQ232; BFQ232A MBB434 handbook, halfpage 50 handbook, halfpage 6 MBB879 hFE Ccb (pF) 5 40 4 3 30 2 20 0 100 200 IC (mA) 300 1 0 10 20 30 VCB (V) 40 VCE = 10 V; Tamb = 25 °C. f = 1 MHz; Tamb = 25 °C. Fig.4 DC current gain as a function of collector current; typical values. Fig.5 Collector-base capacitance as a function of collector-base voltage; typical values. handbook, halfpage 2.0 MBB881 fT (GHz) 1.5 BFQ232A 1.0 BFQ232 0.5 0 50 100 IC (mA) 150 VCE = 10 V; f = 100 MHz; Tamb = 25 °C. Fig.6 Transition frequency as a function of collector current; typical values. 1997 Oct 02 5 Philips Semiconductors Product specification NPN video transistors PACKAGE OUTLINE BFQ232; BFQ232A Plastic single-ended leaded (through hole) package; mountable to heatsink, 1 mounting hole; 3 leads SOT32 E A P1 P D L1 L 1 bp 2 w M 3 c Q e e1 0 2.5 scale 5 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 2.7 2.3 bp 0.88 0.65 c 0.60 0.45 D 11.1 10.5 E 7.8 7.2 e 4.58 e1 2.29 L 16.5 15.3 L1(1) max 2.54 Q 1.5 0.9 P 3.2 3.0 P1 3.9 3.6 w 0.254 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT32 REFERENCES IEC JEDEC TO-126 EIAJ EUROPEAN PROJECTION ISSUE DATE 97-03-04 1997 Oct 02 6 Philips Semiconductors Product specification NPN video transistors DEFINITIONS Data sheet status Objective spe.


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