DISCRETE SEMICONDUCTORS
DATA SHEET
BFQ231; BFQ231A NPN video transistors
Product specification Supersedes data of Novem...
DISCRETE SEMICONDUCTORS
DATA SHEET
BFQ231; BFQ231A
NPN video
transistors
Product specification Supersedes data of November 1995 File under Discrete Semiconductors, SC05 1997 Oct 02
Philips Semiconductors
Product specification
NPN video
transistors
FEATURES High breakdown voltages Low output capacitance High gain bandwidth Good thermal stability Gold metallization ensures excellent reliability. APPLICATIONS Buffer/driver in high-resolution colour graphics monitors. QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage BFQ231 BFQ231A VCER collector-emitter voltage BFQ231 BFQ231A IC Ptot hFE fT collector current (DC) total power dissipation DC current gain transition frequency BFQ231 BFQ231A Note Ts ≤ 65 °C; note 1 IC = 50 mA; VCE = 10 V IC = 50 mA; VCE = 10 V; Tamb = 25 °C 1 0.8 RBE = 100 Ω − − − − 20 CONDITIONS open emitter − − DESCRIPTION
NPN video
transistor in a SOT54 (TO-92) plastic package.
PNP complements: BFQ251 and BFQ251A. PINNING PIN 1 2 3 base collector emitter DESCRIPTION
BFQ231; BFQ231A
page
1
2 3
MSB033
Fig.1
Simplified outline (SOT54; TO-92).
MIN. − − − − − −
TYP.
MAX. 100 115 95 110 300 1 − − −
UNIT V V V V mA W
35 1.4 1.2
GHz GHz
1. Ts is the temperature at the soldering point of the collector pin, 4 mm from the body.
1997 Oct 02
2
Philips Semiconductors
Product specification
NPN video
transistors
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO PARAMETER collector-base vo...