Low Noise SiGe:C Bipolar RF Transistor
• High gain low noise RF transistor • Based on Infineon's reliable high volume
Si...
Low Noise SiGe:C Bipolar RF
Transistor
High gain low noise RF
transistor Based on Infineon's reliable high volume
Silicon Germanium technology Outstanding noise figure NFmin = 0.7 dB at 1.8 GHz
Outstanding noise figure NFmin = 1.3 dB at 6 GHz Maximum stable gain
Gms = 21 dB at 1.8 GHz Gma = 10 dB at 6 GHz Pb-free (RoHS compliant) and halogen-free thin small flat package (1.4 x 0.8 x 0.59 mm) with visible leads Qualification report according to AEC-Q101 available
BFP620F
3 2
4 1
Top View
43
XYs
12
Direction of Unreeling
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type BFP620F
Marking
Pin Configuration
R2s 1=B 2=E 3=C 4=E -
-
Package TSFP-4
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Collector-emitter voltage
VCEO
TA = 25 °C
TA = -55 °C
Collector-emitter voltage
VCES
Collector-base voltage
VCBO
Emitter-base voltage
VEBO
Collector current
IC
Base current Total power dissipati...