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BFP540F Dataheets PDF



Part Number BFP540F
Manufacturers Infineon Technologies AG
Logo Infineon Technologies AG
Description NPN Silicon RF Transistor
Datasheet BFP540F DatasheetBFP540F Datasheet (PDF)

BFP540F NPN Silicon RF Transistor • For highest gain low noise amplifier at 1.8 GHz • Outstanding Gms = 20 dB Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET to p v ie w 4 3 3 4 XYs 2 1 TSFP-4 45 - Line A T s 1 2 d ir e c tio n o f u n r e e lin g ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFP540F Marking ATs* 1=B Pin Configuration 2=E 3=C 4=E - Package TSFP-4 * Pin configuration fixed relative to marking (see package pi.

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BFP540F NPN Silicon RF Transistor • For highest gain low noise amplifier at 1.8 GHz • Outstanding Gms = 20 dB Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET to p v ie w 4 3 3 4 XYs 2 1 TSFP-4 45 - Line A T s 1 2 d ir e c tio n o f u n r e e lin g ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFP540F Marking ATs* 1=B Pin Configuration 2=E 3=C 4=E - Package TSFP-4 * Pin configuration fixed relative to marking (see package picture) Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 80°C Junction temperature Ambient temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 2) Symbol RthJS Value ≤ 280 Unit K/W Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA T stg Value 4.5 14 14 1 80 8 250 150 -65 ... 150 -65 ... 150 mW °C mA Unit V 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R thJA please refer to Application Note Thermal Resistance 1 Jan-28-2004 BFP540F Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, I B = 0 Collector-emitter cutoff current VCE = 14 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 0.5 V, IC = 0 DC current gain IC = 20 mA, VCE = 3.5 V hFE 50 110 200 IEBO 10 µA ICBO 100 nA ICES 10 µA V(BR)CEO 4.5 5 V Symbol min. Values typ. max. Unit 2 Jan-28-2004 BFP540F Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT IC = 50 mA, VCE = 4 V, f = 1 GHz Collector-base capacitance VCB = 2 V, f = 1 MHz Collector emitter capacitance VCE = 2 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 5 mA, VCE = 2 V, f = 1.8 GHz, ZS = ZSopt IC = 5 mA, VCE = 2 V, f = 3 GHz, ZS = ZSopt Power gain, maximum available1) IC = 20 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt, f = 1.8 GHz IC = 20 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt, f = 3 GHz Transducer gain IC = 20 mA, VCE = 2 V, ZS = ZL = 50 Ω, f = 1.8 GHz IC = 20 mA, VCE = 2 V, ZS = ZL = 50 Ω, f = 3 GHz Third order intercept point at output2) VCE = 2 V, I C = 20 mA, f = 1.8 GHz, ZS = ZL = 50 Ω 1dB Compression point at output IC = 20 mA, VCE = 2 V, ZS = ZL = 50 Ω, f = 1.8 GHz 1G 1/2 ma = |S21e / S12e| (k-(k²-1) ), Gms = |S21e / S12e| 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz 21 - 30 0.14 0.3 0.6 0.24 - GHz pF Ccb Cce Ceb F dB 0.9 1.3 1.4 - G ma |S21e|2 15.5 IP 3 18 13 24.5 dBm 20 14.5 dB P-1dB - 11 - 3 Jan-28-2004 BFP540F SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax): Transitor Chip Data: IS = VAF = NE = VAR = NC.


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