Document
BFP540F
NPN Silicon RF Transistor • For highest gain low noise amplifier at 1.8 GHz • Outstanding Gms = 20 dB Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET
to p v ie w
4 3
3 4
XYs
2 1
TSFP-4
45 - Line
A T s
1 2
d ir e c tio n o f u n r e e lin g
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFP540F
Marking ATs* 1=B
Pin Configuration 2=E 3=C 4=E -
Package TSFP-4
* Pin configuration fixed relative to marking (see package picture) Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 80°C Junction temperature Ambient temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 2) Symbol RthJS Value ≤ 280 Unit K/W Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA T stg Value 4.5 14 14 1 80 8 250 150 -65 ... 150 -65 ... 150 mW °C mA Unit V
1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R thJA please refer to Application Note Thermal Resistance
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Jan-28-2004
BFP540F
Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, I B = 0 Collector-emitter cutoff current VCE = 14 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 0.5 V, IC = 0 DC current gain IC = 20 mA, VCE = 3.5 V hFE 50 110 200 IEBO 10 µA ICBO 100 nA ICES 10 µA V(BR)CEO 4.5 5 V Symbol min. Values typ. max. Unit
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Jan-28-2004
BFP540F
Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT IC = 50 mA, VCE = 4 V, f = 1 GHz Collector-base capacitance VCB = 2 V, f = 1 MHz Collector emitter capacitance VCE = 2 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 5 mA, VCE = 2 V, f = 1.8 GHz, ZS = ZSopt IC = 5 mA, VCE = 2 V, f = 3 GHz, ZS = ZSopt Power gain, maximum available1) IC = 20 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt, f = 1.8 GHz IC = 20 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt, f = 3 GHz Transducer gain IC = 20 mA, VCE = 2 V, ZS = ZL = 50 Ω, f = 1.8 GHz IC = 20 mA, VCE = 2 V, ZS = ZL = 50 Ω, f = 3 GHz Third order intercept point at output2) VCE = 2 V, I C = 20 mA, f = 1.8 GHz, ZS = ZL = 50 Ω 1dB Compression point at output IC = 20 mA, VCE = 2 V, ZS = ZL = 50 Ω, f = 1.8 GHz
1G 1/2 ma = |S21e / S12e| (k-(k²-1) ), Gms = |S21e / S12e| 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz
21 -
30 0.14 0.3 0.6
0.24 -
GHz pF
Ccb Cce Ceb F
dB 0.9 1.3 1.4 -
G ma |S21e|2 15.5 IP 3 18 13 24.5 dBm 20 14.5 dB
P-1dB
-
11
-
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Jan-28-2004
BFP540F
SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax): Transitor Chip Data:
IS = VAF = NE = VAR = NC.