BFP520

SIEGET ®45 NPN Silicon RF Transistor Preliminary data For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V Outstanding Ga = 20 dB Noise Figure F = 0.95 dB For oscillators up to 15 GHz Transition frequency fT = 45 GHz Gold metalization for high reliability SIEGET ® 45 - Line Siemens Grounded Emitter Transistor 45 GHz fT - Line BFP 520 3 4 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFP 520 Marking Ordering Code APs Q62702-F1794 Pin Configuration 1=B 2=E 3=C 4=E Package SOT-343 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation, T S ≤ 105 °C Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point 1) Symbol Value 2.5 12 1 40 4 100 150 -65 ...+150 -65 ...+150 Unit V V V mA mA mW °C °C °C VCEO VCBO VEBO IC IB Ptot Tj TA Tstg RthJS ≤ 450 K/W 1) TS is measured on the collector lead at the soldering point to the pcb Semiconductor Group Semiconductor Group 11 Sep-09-1998 1998-11-01 BFP 520 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Collector-emitter breakdown voltage I C = 1 mA, I B = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 1.5 V, I C = 0 DC current gain I C = 20 mA, VCE = 4 V AC characteristics Transition frequency IC = 30 mA, VCE = 2 V,...