SIEGET® 25
NPN Silicon RF Transistor Preliminary data For high power amplifiers Compression point P-1dB = 26.5 dBm at 1.8 GHz maxim. available Gain Gma = 9.5 dB at 1.8 GHz Transition frequency fT > 17 GHz Gold metalization for high reliability SIEGET ® 25 - Line Siemens Grounded Emitter Transistor 25 GHz fT - Line
BFP 490
4 5 3 2 1
VPW05980
ESD:...