BFP420

Low Noise Silicon Bipolar RF Transistor For high gain and low noise amplifiers Minimum noise figure NFmin = 1.1 dB at 1.8 GHz Outstanding Gms = 21 dB at 1.8 GHz For oscillators up to 10 GHz Transition frequency fT = 25 GHz Pb-free (RoHS compliant) and halogen-free package with visible leads Qualification report according to AEC-Q101 available 3 4 BFP420 2 1 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFP420 Marking Pin Configuration AMs 1=B 2=E 3=C 4=E - - Package SOT343 Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Collector-emitter voltage TA = 25 °C TA = -55 °C Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 98 °C Junction temperature Storage temperature VCEO VCES VCBO VEBO IC IB Ptot TJ TStg 1TS is measured on the emitter lead at the soldering point to the pcb Thermal Resistance Parameter Junction - soldering point1) Symbol RthJS 1 Value 4.5 4.1 15 15 1.5 60 9 210 150 -55 ... 150 Unit V mA mW °C Value 250 Unit K/W 2013-09-19 BFP420 Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 15 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 0.5 V, IC = 0 DC current gain IC = 2...