Low Noise Silicon Bipolar RF Transistor
• For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifi...
Low Noise Silicon Bipolar RF
Transistor
For low noise, high-gain amplifiers up to 2 GHz For linear broadband amplifiers fT = 8 GHz, NFmin = 1 dB at 900 MHz Pb-free (RoHS compliant) package Qualification report according to AEC-Q101 available
3 4
BFP193
2 1
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type BFP193
Marking
Pin Configuration
RCs 1 = C 2 = E 3 = B 4 = E -
-
Package SOT143
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 72°C Junction temperature Storage temperature
VCEO VCES VCBO VEBO IC IB Ptot
TJ TStg
Value 12 20 20 2 80 10 580
150 -55 ... 150
Unit V
mA mW °C
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point2)
RthJS
135 K/W
1TS is measured on the collector lead at the soldering point to the pcb 2For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)
1 2014-04-07
BFP193
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 30 mA, VCE = 8 V, pul...