Document
BFP183R
NPN Silicon RF Transistor
For low noise, high-gain broadband amplifiers at
collector currents from 2 mA to 28 mA
fT = 8 GHz
F = 1.2 dB at 900 MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFP183R
Maximum Ratings Parameter
Marking RHs 1=E
Pin Configuration 2=C 3=E 4=B
Package SOT143R
Unit V
Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg
Value 12 20 20 2 65 5 250 150 -65 ... 150 -65 ... 150
Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation TS 76 °C 1) Junction temperature Ambient temperature Storage temperature
mA mW °C
Thermal Resistance Junction - soldering point 2) RthJS
295
K/W
1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance
thJA
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Aug-09-2001
BFP183R
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 15 mA, VCE = 8 V hFE 50 100 200 IEBO 1 µA ICBO 100 nA ICES 100 µA V(BR)CEO 12 V Symbol min. Values typ. max. Unit
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Aug-09-2001
BFP183R
Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Values Parameter min. AC characteristics (verified by random sampling) Transition frequency IC = 25 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 5 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz f = 1.8 GHz Power gain, maximum stable 1) IC = 15 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz Power gain, maximum available 2) IC = 15 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz IC = 15 mA, VCE = 8 V, ZS = ZL = 50 , f = 900 MHz f = 1.8 GHz
1G ms 2G ma
Unit max. 0.5 dB GHz pF
typ. 8 0.35 0.27 1
fT Ccb Cce Ceb F
6 -
Gms -
1.2 2 21
-
Gma
-
14
-
Transducer gain
|S21e|2 16.5 11 -
= |S21 / S12 | = |S21 / S12 | (k-(k2-1)1/2)
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Aug-09-2001
BFP183R
SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 1.0345 14.772 1.2149 3.4276 0.85331 1.0112 23.077 22.746 1.8773 1.1967 1.0553 0 3 fA V V BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = 115.98 0.14562 10.016 0.013483 2.5426 1.3435 1.0792 0.36823 0 0.3 0 0 0.54852 V deg fF A A NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 0.80799 16.818 0.99543 1.3559 0.43801 0.20486 0.45354 0.50905 460.11 0.053823 0.75 1.11 300 fA fA mA
fF ps mA V ns -
V fF V eV K
All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut für Mobil-und Satellitentechnik (IMST)
Package Equivalent Circuit:
L BI = L BO = L EI = L EO = L CI = L CO = C BE = C CB = C CE =
0.89 0.73 0.4 0.15 0 0.42 189 15 187
nH nH nH nH nH nH fF fF fF
Valid up to 6GHz
For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/silicondiscretes
4
Aug-09-2001
BFP183R
Total power dissipation Ptot = f (TS )
300
mW
P tot
200
150
100
50
0 0
20
40
60
80
100
120 °C
150
TS
Permissible Pulse Load RthJS = f (tp )
Permissible Pulse Load Ptotmax/P totDC = f (tp)
10 3
10 2
Ptotmax / PtotDC
K/W
-
10 2
0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0
10 1
D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
RthJS
10 1 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
10 0 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
tp
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Aug-09-2001
BFP183R
Collector-base capacitance Ccb = f (VCB ) f = 1MHz
Transition frequency f T = f (I C)
V CE = Parameter
0.70
pF
10.0
GHz
0.60 0.55 0.50 8.0 7.0
10V 5V 3V
Ccb
fT
0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00 0 4 8 12 16
V
6.0 5.0
2V
4.0 3.0 2.0 1.0 0.0 0
1V 0.7V
22
5
10
15
20
25
30
35 mA
45
VCB
IC
Power Gain Gma , Gms = f(IC )
f = 0.9GHz VCE = Parameter
22
10V 5V
Power Gain Gma, Gms = f(I C)
f = 1.8GHz VCE = Parameter
16
dB 10V 3V 2V
dB
18
3V
12
G
2V
16 8 14 6 12
1V 0.7V 1V
G
10
4 10
0.7V
2
8 0
5
10
15
20
25
30
35 mA
45
0 0
5
10
15
20
25
30
35 mA
45
IC
IC
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Aug-09-2001
BFP183R
Power Gain Gma , Gms = f(VCE):_____
|S21|2 = f(VCE):--------f = Parameter
22
Intermodulation Intercept Point IP3=f(IC)
(3rd order, Output, ZS=ZL=50) VCE = Parameter, f = 900MHz
28
IC=15mA
dB
0.9GHz
dBm
8V
24 18
0.9GHz 5V
22
G
16
1.8GHz
IP 3
20
3V
14
18 16
1.8GHz 2V
12
14 10 12 8 10
1V
6 0
2
4
6
8
V
12
8 2
6
10
14
18
22
26
30 mA
38.