BFP 181W
NPN Silicon RF Transistor
For low noise, high-gain broadband amplifier at
3 4
collector currents from 0.5 m...
BFP 181W
NPN Silicon RF
Transistor
For low noise, high-gain broadband amplifier at
3 4
collector currents from 0.5 mA to 12 mA
fT = 8 GHz
F = 1.45 dB at 900 MHz
2 1
VPS05605
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFP 181W
Maximum Ratings Parameter
Marking RFs 1=E
Pin Configuration 2=C 3=E 4=B
Package SOT-343
Unit V
Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg
Value 12 20 20 2 20 2 175 150 -65 ... 150 -65 ... 150
Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation , TS 91 °C 1) Junction temperature Ambient temperature Storage temperature
mA mW °C
Thermal Resistance Junction - soldering point RthJS
340
K/W
1T is measured on the collector lead at the soldering point to the pcb S
1
Oct-12-1999
BFP 181W
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 5 mA, VCE = 8 V hFE 50 100 200 IEBO 1 µA ICBO 100 nA ICES 100 µA V(BR)CEO 12 V Symbol min. Values typ. max. Unit
2
Oct-12-1999
BFP 181W
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. AC characteristics (verified by random sampling) Transition...
