BFG591

DISCRETE SEMICONDUCTORS DATA SHEET BFG591 NPN 7 GHz wideband transistor Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC14 1995 Sep 04 Philips Semiconductors Product specification NPN 7 GHz wideband transistor FEATURES High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability. APPLICATIONS Intended for applications in the GHz range such as MATV or CATV amplifiers and RF communications subscriber equipment. PINNING PIN 1 2 3 4 base emitter collector DESCRIPTION emitter 1 Top view BFG591 DESCRIPTION NPN silicon planar epitaxial transistor in a plastic, 4-pin SOT223 package. fpage 4 2 3 MSB002 - 1 Fig.1 SOT223. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE Cre fT GUM s 21 Note 1. Ts is the temperature at the soldering point of the collector pin. 2 PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain feedback capacitance transition frequency maximum unilateral power gain insertion power gain open base CONDITIONS open emitter − − − up to Ts = 80 °C; note 1 IC = 70 mA; VCE = 8 V IC = Ic = 0; VCE = 12 V; f = 1 MHz IC = 70 mA; VCE = 12 V; f = 1 GHz IC = 70 mA; VCE = 12 V; f = 900 MHz; Tamb = 25 °C IC = 70 mA; VCE = 12 V; f = 900 MHz; Tamb = 25 °C − MIN. − − − − TYP. MAX. 20 15 200 2 250 − − − − V V UNIT mA W pF GHz dB dB 60 − − − − 90 0.7 7 13 12 1995 Sep 04 2 Philips Semiconductors Produ...