DatasheetsPDF.com

BFG25AW Dataheets PDF



Part Number BFG25AW
Manufacturers NXP
Logo NXP
Description NPN 5 GHz wideband transistors
Datasheet BFG25AW DatasheetBFG25AW Datasheet (PDF)

DATA SHEET book, halfpage M3D123 BFG25AW; BFG25AW/X NPN 5 GHz wideband transistors Product specification Supersedes data of August 1995 1998 Sep 23 Philips Semiconductors Product specification NPN 5 GHz wideband transistors FEATURES • Low current consumption (100 µA to 1 mA) • Low noise figure • Gold metallization ensures excellent reliability. APPLICATIONS Wideband applications in UHF low power amplifiers, such as pocket telephones and paging systems. DESCRIPTION NPN silicon planar epitaxial.

  BFG25AW   BFG25AW



Document
DATA SHEET book, halfpage M3D123 BFG25AW; BFG25AW/X NPN 5 GHz wideband transistors Product specification Supersedes data of August 1995 1998 Sep 23 Philips Semiconductors Product specification NPN 5 GHz wideband transistors FEATURES • Low current consumption (100 µA to 1 mA) • Low noise figure • Gold metallization ensures excellent reliability. APPLICATIONS Wideband applications in UHF low power amplifiers, such as pocket telephones and paging systems. DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE Cre fT GUM F PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain feedback capacitance transition frequency maximum unilateral power gain noise figure Ts ≤ 85 °C IC = 0.5 mA; VCE = 1 V IC = 0; VCE = 1 V; f = 1 MHz open emitter open base CONDITIONS PINNING PIN BFG25AW 1 2 3 4 collector base emitter emitter DESCRIPTION BFG25AW; BFG25AW/X fpage 4 3 1 Top view 2 MBK523 BFG25AW/X 1 2 3 4 collector emitter base emitter Fig.1 SOT343N. MARKING TYPE NUMBER BFG25AW BFG25AW/X CODE N6 V1 MIN. − − − − 50 − − − TYP. − − − − 80 0.2 5 16 2 MAX. UNIT 8 5 6.5 500 200 0.3 − − − pF GHz dB dB V V mA mW IC = 1 mA; VCE = 1 V; f = 500 MHz; Tamb = 25 °C 3.5 IC = 0.5 mA; VCE = 1 V; f = 1 GHz; Tamb = 25 °C Γs = Γopt; IC = 1 mA; VCE = 1 V; f = 1 GHz LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector pin. 1998 Sep 23 2 PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature junction temperature Ts ≤ 85 °C; see Fig.2; note 1 open base open collector CONDITIONS open emitter − − − − − −65 − MIN. 8 5 2 6.5 500 +150 175 MAX. V V V mA mW °C °C UNIT Philips Semiconductors Product specification NPN 5 GHz wideband transistors THERMAL CHARACTERISTICS SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector pin. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO hFE Cre fT GUM PARAMETER collector-base breakdown voltage emitter-base breakdown voltage collector leakage current DC current gain feedback capacitance transition frequency maximum unilateral power gain; note 1 CONDITIONS IC = 100 µA; IE = 0 IE = 100 µA; IC = 0 PARAMETER BFG25AW; BFG25AW/X CONDITIONS VALUE 180 UNIT K/W thermal resistance from junction to soldering point Ts ≤ 85 °C; note 1 MIN. − − − − 50 − 3.5 − − − − TYP. − − − − 80 0.2 5 16 8 1.9 2 MAX. 8 5 2 50 200 0.3 − − − − UNIT V V V nA pF GHz dB dB dB dB collector-emitter breakdown voltage IC = 1 mA; IB = 0 open emitter; VCB = 5 V; IE = 0 IC = 0.5 mA; VCE = 1 V IC = 0; VCE = 1 V; f = 1 MHz IC = 1 mA; VCE = 1 V; f = 1 GHz; Tamb = 25 °C IC = 0.5 mA; VCE = 1 V; f = 1 GHz; Tamb = 25 °C IC .


BFG235 BFG25AW BFG31


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)