Document
DATA SHEET
book, halfpage
M3D123
BFG25AW; BFG25AW/X NPN 5 GHz wideband transistors
Product specification Supersedes data of August 1995 1998 Sep 23
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
FEATURES • Low current consumption (100 µA to 1 mA) • Low noise figure • Gold metallization ensures excellent reliability. APPLICATIONS Wideband applications in UHF low power amplifiers, such as pocket telephones and paging systems. DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE Cre fT GUM F PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain feedback capacitance transition frequency maximum unilateral power gain noise figure Ts ≤ 85 °C IC = 0.5 mA; VCE = 1 V IC = 0; VCE = 1 V; f = 1 MHz open emitter open base CONDITIONS PINNING PIN BFG25AW 1 2 3 4 collector base emitter emitter DESCRIPTION
BFG25AW; BFG25AW/X
fpage
4
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1 Top view
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MBK523
BFG25AW/X 1 2 3 4 collector emitter base emitter
Fig.1 SOT343N.
MARKING TYPE NUMBER BFG25AW BFG25AW/X CODE N6 V1
MIN. − − − − 50 − − −
TYP. − − − − 80 0.2 5 16 2
MAX. UNIT 8 5 6.5 500 200 0.3 − − − pF GHz dB dB V V mA mW
IC = 1 mA; VCE = 1 V; f = 500 MHz; Tamb = 25 °C 3.5 IC = 0.5 mA; VCE = 1 V; f = 1 GHz; Tamb = 25 °C Γs = Γopt; IC = 1 mA; VCE = 1 V; f = 1 GHz
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector pin. 1998 Sep 23 2 PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature junction temperature Ts ≤ 85 °C; see Fig.2; note 1 open base open collector CONDITIONS open emitter − − − − − −65 − MIN. 8 5 2 6.5 500 +150 175 MAX. V V V mA mW °C °C UNIT
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
THERMAL CHARACTERISTICS SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector pin. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO hFE Cre fT GUM PARAMETER collector-base breakdown voltage emitter-base breakdown voltage collector leakage current DC current gain feedback capacitance transition frequency maximum unilateral power gain; note 1 CONDITIONS IC = 100 µA; IE = 0 IE = 100 µA; IC = 0 PARAMETER
BFG25AW; BFG25AW/X
CONDITIONS
VALUE 180
UNIT K/W
thermal resistance from junction to soldering point Ts ≤ 85 °C; note 1
MIN. − − − − 50 − 3.5 − − − −
TYP. − − − − 80 0.2 5 16 8 1.9 2
MAX. 8 5 2 50 200 0.3 − − − −
UNIT V V V nA pF GHz dB dB dB dB
collector-emitter breakdown voltage IC = 1 mA; IB = 0 open emitter; VCB = 5 V; IE = 0 IC = 0.5 mA; VCE = 1 V IC = 0; VCE = 1 V; f = 1 MHz IC = 1 mA; VCE = 1 V; f = 1 GHz; Tamb = 25 °C IC = 0.5 mA; VCE = 1 V; f = 1 GHz; Tamb = 25 °C IC .