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BFG235

Infineon Technologies AG

NPN Silicon RF Transistor


Description
BFG 235 NPN Silicon RF Transistor  For low-distortion broadband output amplifier 4 stages in antenna and telecommunication systems up to 2 GHz at collector currents from 120 mA to 250 mA  Power amplifiers for DECT and PCN systems  Integrated emitter ballast resistor  fT = 5.5 GHz 3 2 1 VPS05163 ESD: Electrostatic discharge sensitive device, observe h...



Infineon Technologies AG

BFG235

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