BFG196
NPN Silicon RF Transistor
For low noise, low distortion broadband
4
amplifiers in antenna and telecommunicati...
BFG196
NPN Silicon RF
Transistor
For low noise, low distortion broadband
4
amplifiers in antenna and telecommunication systems up to 1.5 GHz at collector currents from 20 mA to 80 mA
Power amplifier for DECT and PCN Systems fT = 7.5 GHz
3 2 1
VPS05163
F = 1.5 dB at 900 GHz
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFG196
Maximum Ratings Parameter
Marking BFG196 1=E
Pin Configuration 2=B 3=E 4=C
Package SOT223
Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg
Value 12 20 20 2 100 12 800 150 -65 ... 150 -65 ... 150
Unit V
Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation TS 90 °C 1) Junction temperature Ambient temperature Storage temperature
mA mW °C
Thermal Resistance Junction - soldering point 2) RthJS
75
K/W
1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R thJA please refer to Application Note Thermal Resistance
1
Jun-27-2001
BFG196
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 50 mA, VCE = 8 V hFE 50 100 200 IEBO 1 µA ICBO 100 nA ICES 100 µA V(BR)CEO 12 V Symbol min. Values typ. max. Unit
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