BFG193
NPN Silicon RF Transistor
For low noise, high-gain amplifiers up to 2 GHz For linear broadband amplifiers f...
BFG193
NPN Silicon RF
Transistor
For low noise, high-gain amplifiers up to 2 GHz For linear broadband amplifiers fT = 8 GHz
4
F = 1.3 dB at 900 MHz
3 2 1
VPS05163
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFG193
Maximum Ratings Parameter
Marking BFG193 1=E
Pin Configuration 2=B 3=E 4=C
Package SOT223
Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg
Value 12 20 20 2 80 10 600 150 -65 ... 150 -65 ... 150
Unit V
Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation TS 87 °C 1) Junction temperature Ambient temperature Storage temperature
mA mW °C
Thermal Resistance Junction - soldering point 2) RthJS
105
K/W
1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R thJA please refer to Application Note Thermal Resistance
1
Jun-27-2001
BFG193
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 30 mA, VCE = 8 V hFE 50 100 200 IEBO 1 µA ICBO 100 nA ICES 100 µA V(BR)CEO 12 V Symbol min. Values typ. max. Unit
2
Jun-27-2001
BFG193
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Va...
