BFG17A

DISCRETE SEMICONDUCTORS DATA SHEET BFG17A NPN 3 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 1995 Sep 12 Philips Semiconductors Product specification NPN 3 GHz wideband transistor DESCRIPTION NPN wideband transistor in a microminiature plastic SOT143 surface mounting envelope with double emitter bonding. It is intended for use in wideband aerial amplifiers using SMD technology. PINNING PIN Code: E6 1 2 3 4 collector base emitter emitter 1 Top view BFG17A DESCRIPTION handbook, 2 columns 4 3 2 MSB014 Fig.1 SOT143. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE fT Cre GUM F PARAMETER collector-base voltage collector-emitter voltage DC collector current total power dissipation DC current gain transition frequency feedback capacitance maximum unilateral power gain noise figure up to Ts = 85 °C; note 1 IC = 25 mA; VCE = 1 V; Tamb = 25 °C IC = 25 mA; VCE = 5 V; f = 500 MHz; Tamb = 25 °C IC = 0; VCE = 5 V; f = 1 MHz IC = 15 mA; VCE = 10 V; f = 800 MHz; Tamb = 25 °C IC = 2 mA; VCE = 5 V; f = 800 MHz; Tamb = 25 °C; ZS = 60 Ω; bs = opt. open base CONDITIONS open emitter MIN. − − − − 20 − − − − TYP. − − − − − 2.8 0.4 15 2.5 MAX. 25 15 50 300 150 − − − − GHz pF dB dB UNIT V V mA mW LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector tab. PARAMETER collector-base voltage collector-emitter voltage emitter-base...