BFG11W

DISCRETE SEMICONDUCTORS DATA SHEET BFG11W/X NPN 2 GHz power transistor Product specification Supersedes data of September 1995 File under Discrete Semiconductors, SC14 1996 Jun 04 Philips Semiconductors Product specification NPN 2 GHz power transistor FEATURES High power gain High efficiency Small size discrete power amplifier 1.9 GHz operating area Gold metallization ensures excellent reliability Linear and non-linear operation. APPLICATIONS Common emitter class-AB operation in handheld radio equipment at 1.9 GHz such as DECT, PHS. Driver for DCS 1800. DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a plastic 4-pin dual-emitter SOT343 package. Marking code: S4 1 Top view 2 handbook, halfpage BFG11W/X PINNING - SOT343 PIN 1 2 3 4 collector emitter base emitter DESCRIPTION 4 3 MBK523 Fig.1 Simplified outline. QUICK REFERENCE DATA RF performance at Ts ≤ 60 °C in a common-emitter test circuit. MODE OF OPERATION Pulsed, class-AB, δ < 1 : 2; tp = 5 ms f (GHz) 1.9 VCE (V) 3.6 PL (mW) 400 Gp (dB) ≥6 ηc (%) ≥60 1996 Jun 04 2 Philips Semiconductors Product specification NPN 2 GHz power transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature junction temperature up to Ts = 60 °C; note 1 CONDITIONS open emitter open base ...