Document
DISCRETE SEMICONDUCTORS
DATA SHEET
BFG10W/X UHF power transistor
Product specification File under Discrete Semiconductors, SC14
1995 Sep 22
Philips Semiconductors
UHF power transistor
Product specification
BFG10W/X
FEATURES
• High efficiency • Small size discrete power amplifier • 900 MHz and 1.9 GHz operating
areas • Gold metallization ensures
excellent reliability.
APPLICATIONS
• Common emitter class-AB operation in hand-held radio equipment up to 1.9 GHz.
DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin dual-emitter SOT343 package.
PINNING
PIN DESCRIPTION 1 collector 2 emitter 3 base 4 emitter
fpage
4
3
1 Top view
2
MBK523
Marking code: T5.
Fig.1 SOT343.
QUICK REFERENCE DATA RF performance at Tamb = 25 °C in a common-emitter test circuit.
MODE OF OPERATION
f (GHz)
Pulsed, class-AB, duty cycle: < 1 : 2; tp = 10 ms Pulsed, class-AB, duty cycle: < 1 : 8; tp = 4.6 ms
1.9 0.9 0.9
VCE (V)
3.6 6 6
PL (mW)
200 650 360
Gp (.