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BFG10

Part Number	BFG10
Manufacturer	NXP
Description	NPN 2 GHz RF power transistor
Published	Mar 23, 2005
Detailed Description	DISCRETE SEMICONDUCTORS DATA SHEET BFG10; BFG10/X NPN 2 GHz RF power transistor Product speciﬁcation Supersedes data o...
Datasheet	BFG10 PDF File

Overview

DISCRETE SEMICONDUCTORS DATA SHEET BFG10; BFG10/X NPN 2 GHz RF power transistor Product speciﬁcation Supersedes data of 1995 Mar 07 File under Discrete Semiconductors, SC14 1995 Aug 31 Philips Semiconductors Product speciﬁcation NPN 2 GHz RF power transistor FEATURES • High power gain • High efficiency • Small size discrete power amplifier • 1.
9 GHz operating area • Gold metallization ensures excellent reliability.
APPLICATIONS • Common emitter class-AB operation in hand-held radio equipment at 1.
9 GHz.
DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in plastic, 4-pin dual-emitter SOT143 package.
PINNING PIN DESCRIPTION BFG10; BFG10/X BFG10 (see Fig.
1) 1 2 3 4 collect...

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