BF999

BF999 Silicon N-Channel MOSFET Triode
For high-frequency stages up to 300 MHz 3 preferably in FM applications 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Pin Configuration Package BF999 Maximum Ratings Parameter LBs 1=G 2=D Symbol 3=S Value SOT23 Unit Drain-source voltage Drain current Gate-source peak current Total power dissipation, TS  76 °C Storage temperature Channel temperature Thermal Resistance Channel - soldering point1) VDS ID 20 30 10 200 -55 ... 150 150 V mA mA mW °C
IGSM Ptot Tstg Tch Rthchs
370 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Nov-08-2002 BF999 Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter DC characteristics Drain-source breakdown voltage ID = 10 µA, - VGS = 4 V Gate-source breakdown voltage

IGS = 10 mA, VDS = 0

V(BR)GSS
IGSS Symbol min. V(BR)DS 20 6.5 5 - Values typ. max. 12 50 18 2.5 Unit V Gate-source leakage current

VGS = 5 V, VDS = 0 nA mA V Drain current VDS = 10 V, VGS = 0 Gate-source pinch-off voltage VDS = 10 V, ID = 20 µA IDSS - VGS (p) AC characteristics Forward tranconductance VDS = 10 V, I D = 10 mA Gate input capacitance VDS = 10 V, I D = 10 mA, f = 1 MHz Reverse tranfer capacitance VDS = 10 V, I D = 10 mA, f = 1 MHz Output capacitance VDS = 10 V, I D = 10 mA, f = 1 MHz Power gain VDS = 10 V, I D = 10 mA, f = 200 MHz Noise figure VDS = 10 V, I D = 10 mA, f = 200...