BF998W

BF998... Silicon N_Channel MOSFET Tetrode Short-channel transistor with high S / C quality factor For low-noise, gain-controlled input stage up to 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration Marking BF998 BF998R BF998W SOT143 SOT143R SOT343 1=S 1=D 1=D 2=D 2=S 2=S 3=G2 3=G1 3=G1 4=G1 4=G2 4=G2 - - MOs MRs MR Maximum Ratings Parameter Drain-source voltage Continuous drain current Gate 1/ gate 2-source current Total power dissipation TS ≤ 76 °C, BF998, BF998R TS ≤ 94 °C, BF998W Storage temperature Channel temperature Thermal Resistance Parameter Channel - soldering point 1) BF998, BF998R BF998W 1For calculation of R thJA please refer to Application Note Thermal Resistance Symbol VDS ID ±IG1/2SM Ptot Value 12 30 10 200 200 Unit V mA Tstg Tch Symbol Rthchs -55 ... 150 150 °C Value ≤ 370 ≤ 280 Unit K/W 1 Feb-13-2004 BF998... Electrical Characteristics Parameter DC Characteristics Drain-source breakdown voltage ID = 10 µA, VG1S = -4 V, VG2S = -4 V Gate 1 source breakdown voltage ±IG2S = 10 mA, VG2S = VDS = 0 Gate2 source breakdown voltage ±IG2S = 10 mA, VG2S = VDS = 0 Gate 1 source leakage current ±V G1S = 5 V, VG2S = VDS = 0 Gate 2 source leakage current ±V G2S = 5 V, VG2S = VDS = 0 Drain current VDS = 8 V, VG1S = 0 , VG2S = 4 V Gate 1 source pinch-off voltage VDS = 8 V, VG2S = 4 V, ID = 20 µA Gate 2 source pinch-off voltage VDS = 8 V, VG1S = 0 , ID = 20 µA -VG2S(p) 0.8 2 -VG1S(p) 0.8 2....