BF998

Silicon N Channel MOSFET Tetrode BF 998 Features q q Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz Type BF 998 Marking MO Ordering Code (tape and reel) Q62702-F1129 Pin Configuration 1 2 3 4 S D G2 G1 Package1) SOT-143 Maximum Ratings Parameter Drain-source voltage Drain current Gate 1/gate 2 peak source current Total power dissipation, TS < 76 ˚C Storage temperature range Channel temperature Thermal Resistance Junction - soldering point Rth JS < 370 K/W Symbol VDS ID ± Values 12 30 10 200 150 Unit V mA mW IG1/2SM Ptot Tstg Tch – 55 … + 150 ˚C 1) For detailed information see chapter Package Outlines. Semiconductor Group 1 04.96 BF 998 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC Characteristics Drain-source breakdown voltage ID = 10 µA, – VG1S = – VG2S = 4 V Gate 1-source breakdown voltage ± IG1S = 10 mA, VG2S = VDS = 0 Gate 2-source breakdown voltage ± IG2S = 10 mA, VG1S = VDS = 0 Gate 1-source leakage current ± VG1S = 5 V, VG2S = VDS = 0 Gate 2-source leakage current ± VG2S = 5 V, VG1S = VDS = 0 Drain current VDS = 8 V, VG1S = 0, VG2S = 4 V Gate 1-source pinch-off voltage VDS = 8 V, VG2S = 4 V, ID = 20 µA Gate 2-source pinch-off voltage VDS = 8 V, VG1S = 0, ID = 20 µA V(BR) DS ± V(BR) G1SS ± V(BR) G2SS ± IG1SS ± IG2SS Values typ. max. Unit 12 8 8 – – 2 – – – – – – – – – – – 12 12 50 50 18 2.5 2 V nA IDSS – VG1S(p) – VG2S(p) mA V Se...