N.Channel Dual Gate MOS-Fieldeffect Tetrode
BF996S
Vishay Telefunken
N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
Electrostatic sensitive device. Ob...
Description
BF996S
Vishay Telefunken
N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
Electrostatic sensitive device. Observe precautions for handling.
Applications
Input- and mixer stages in UHF tuners.
Features
D Integrated gate protection diodes D Low noise figure D Low feedback capacitance
2 1
D High cross modulation performance D Low input capacitance D High AGC-range
G2 G1 D
94 9279
13 579
3
4
12623
BF996S Marking: MH Plastic case (SOT 143) 1=Source, 2=Drain, 3=Gate 2, 4=Gate 1
S
Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified Parameter Drain - source voltage Drain current Gate 1/Gate 2 - source peak current Total power dissipation Channel temperature Storage temperature range Test Conditions Type Symbol Value VDS 20 ID 30 ±IG1/G2SM 10 Ptot 200 TCh 150 Tstg –65 to +150 Unit V mA mA mW °C °C
Tamb ≤ 60 °C
Maximum Thermal Resistance
Tamb = 25_C, unless otherwise specified Parameter Test Conditions Channel ambient on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35mm Cu Symbol RthChA Value 450 Unit K/W
Document Number 85010 Rev. 3, 20-Jan-99
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BF996S
Vishay Telefunken Electrical DC Characteristics
Tamb = 25_C, unless otherwise specified Parameter Drain - source breakdown voltage Gate 1 - source breakdown voltage Gate 2 - source breakdown voltage Gate 1 - source leakage current Gate 2 - source leakage current Drain current Test Conditions ID = 10 mA, –VG1S = –VG2S = 4 V ±IG1S = 10 mA, VG2...
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