N-Channel Dual Gate MOS-Fieldeffect Tetrode
BF966S
Vishay Telefunken
N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
Electrostatic sensitive device. Ob...
Description
BF966S
Vishay Telefunken
N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
Electrostatic sensitive device. Observe precautions for handling.
Applications
Input- and mixer stages especially UHF-tuners.
Features
D Integrated gate protection diodes D High cross modulation performance D Low noise figure
3 4 2
94 9307 96 12647
D High AGC-range D Low feedback capacitance D Low input capacitance
G2 G1 D
1
BF966S Marking: BF966S Plastic case (TO 50) 1=Drain, 2=Source, 3=Gate 1, 4=Gate 2
12623
S
Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified Parameter Drain - source voltage Drain current Gate 1/Gate 2 - source peak current Total power dissipation Channel temperature Storage temperature range Test Conditions Type Symbol Value VDS 20 ID 30 ±IG1/G2SM 10 Ptot 200 TCh 150 Tstg –55 to +150 Unit V mA mA mW °C °C
Tamb ≤ 60 °C
Maximum Thermal Resistance
Tamb = 25_C, unless otherwise specified Parameter Test Conditions Channel ambient on glass fibre printed board (40 x 25 x 1.5) mm3 plated with 35mm Cu Symbol RthChA Value 450 Unit K/W
Document Number 85004 Rev. 3, 20-Jan-99
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BF966S
Vishay Telefunken Electrical DC Characteristics
Tamb = 25_C, unless otherwise specified Parameter Drain - source breakdown voltage Gate 1 - source breakdown voltage Gate 2 - source breakdown voltage Gate 1 - source leakage current Gate 2 - source leakage current Drain current Test Conditions ID = 10 mA, –VG1S = –VG2S = 4 V ±IG1S = ...
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