BF901

DISCRETE SEMICONDUCTORS DATA SHEET BF901; BF901R Silicon n-channel dual gate MOS-FETs Product specification File under Discrete Semiconductors, SC07 November 1992 Philips Semiconductors Product specification Silicon n-channel dual gate MOS-FETs FEATURES Intended for low voltage operation Short channel transistor with high ratio  Yfs :Cis Low noise gain-controlled amplifier to 1 GHz BF901R has reverse pinning. DESCRIPTION Enhancement type field-effect transistors in plastic microminiature SOT143 and SOT143R envelopes, with source and substrate interconnected. They are intended for UHF and VHF applications, such as television tuners and professional communications equipment especially suited for low voltage operation. These MOS-FET tetrodes are protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. PINNING PIN 1 2 3 4 drain gate 2 gate 1 DESCRIPTION source Marking code: MO1. BF901; BF901R QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj  Yfs  Cig1-s Crs F PARAMETER drain-source voltage drain current total power dissipation junction temperature transfer admittance input capacitance at gate 1 feedback capacitance noise figure at 800 MHz − − − − 28 2.35 25 1.7 TYP. MAX. 12 30 200 150 35 2.75 − − UNIT V mA mW °C mS pF fF dB handbook, halfpage 4 3 g2 g1 d 1 Top view 2 s,b MAM039 Fig.1 Simplified outline (SOT143) and symbol. handbook, halfpage d 4 g2 g1 3 2 Top view 1 s,b MAM040 Marking code: MO2. Fig.2 Sim...