DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BF862 N-channel junction FET
Product specification Supersedes ...
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BF862 N-channel junction FET
Product specification Supersedes data of 1999 Jun 29
2000 Jan 05
NXP Semiconductors
N-channel junction FET
Product specification
BF862
FEATURES High transition frequency for excellent sensitivity in
AM car radios High transfer admittance.
APPLICATIONS Pre-amplifiers in AM car radios.
DESCRIPTION Silicon N-channel symmetrical junction field-effect
transistor in a SOT23 package. Drain and source are interchangeable.
PINNING SOT23
PIN 1 source 2 drain 3 gate
DESCRIPTION
handbook, halfpa2ge
1 g
d s
Top view
3
MAM036
Marking code: 2Ap.
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
SYMBOL
VDS VGSoff IDSS Ptot yfs Tj
PARAMETER drain-source voltage gate-source cut-off voltage drain-source current total power dissipation transfer admittance junction temperature
CONDITIONS MIN.
0.3
10
Ts 90 C
35
TYP. 0.8 45
MAX.
20 1.2 25 300 150
UNIT V V mA mW mS C
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling.
2000 Jan 05
2
NXP Semiconductors
N-channel junction FET
Product specification
BF862
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VDS VDG VGS IDS IG Ptot Tstg Tj
PARAMETER
drain-source voltage drain-gate voltage gate-source voltage drain-source current forward gate current total power dissipation stora...