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BF862

NXP

N-channel junction FET

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BF862 N-channel junction FET Product specification Supersedes ...


NXP

BF862

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BF862 N-channel junction FET Product specification Supersedes data of 1999 Jun 29 2000 Jan 05 NXP Semiconductors N-channel junction FET Product specification BF862 FEATURES  High transition frequency for excellent sensitivity in AM car radios  High transfer admittance. APPLICATIONS  Pre-amplifiers in AM car radios. DESCRIPTION Silicon N-channel symmetrical junction field-effect transistor in a SOT23 package. Drain and source are interchangeable. PINNING SOT23 PIN 1 source 2 drain 3 gate DESCRIPTION handbook, halfpa2ge 1 g d s Top view 3 MAM036 Marking code: 2Ap. Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA SYMBOL VDS VGSoff IDSS Ptot yfs Tj PARAMETER drain-source voltage gate-source cut-off voltage drain-source current total power dissipation transfer admittance junction temperature CONDITIONS MIN.  0.3 10 Ts  90 C  35  TYP.  0.8   45  MAX. 20 1.2 25 300  150 UNIT V V mA mW mS C CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. 2000 Jan 05 2 NXP Semiconductors N-channel junction FET Product specification BF862 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VDS VDG VGS IDS IG Ptot Tstg Tj PARAMETER drain-source voltage drain-gate voltage gate-source voltage drain-source current forward gate current total power dissipation stora...




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