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BF820

General Semiconductor

Small Signal Transistors

BF820, BF822 Small Signal Transistors (NPN) SOT-23 .122 (3.1) .118 (3.0) .016 (0.4) 3 FEATURES ♦ NPN Silicon Epitaxial ...


General Semiconductor

BF820

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BF820, BF822 Small Signal Transistors (NPN) SOT-23 .122 (3.1) .118 (3.0) .016 (0.4) 3 FEATURES ♦ NPN Silicon Epitaxial Planar Transistors Top View .056 (1.43) .052 (1.33) especially suited for application in class-B video output stages of TV receivers and monitors. ♦ As complementary types, the PNP transistors BF821 and BF823 are recommended. 1 2 max. .004 (0.1) .007 (0.175) .005 (0.125) .037(0.95) .037(0.95) .045 (1.15) .037 (0.95) .016 (0.4) .016 (0.4) .102 (2.6) .094 (2.4) MECHANICAL DATA Case: SOT-23 Plastic Package Weight: approx. 0.008 g Marking code BF820 = 1V BF822 = 1X Dimensions in inches and (millimeters) Pin configuration 1 = Base, 2 = Emitter, 3 = Collector. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current Power Dissipation at TSB = 50 °C Junction Temperature Storage Temperature Range 1) Value 300 250 250 300 5 50 100 3001) 150 –65 to +150 Unit V V V V V mA mA mW °C °C BF820 BF822 BF822 BF820 VCBO VCBO VCEO VCER VEBO IC ICM Ptot Tj TS Device on fiberglass substrate, see layout 4/98 BF820, BF822 ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Collector-Base Breakdown Voltage at IC = 100 µA, IB = 0 Collector-Emitter Breakdown Voltage at IC = 10 mA, IE = 0 Collector-Emitter Breakdown Voltage...




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