Document
BF 799W
NPN Silicon RF Transistor
• For linear broadband amplifier applications up to 500MHz • SAW filter driver in TV tuners
Type BF 799W
Marking Ordering Code LKs Q62702-F1571
Pin Configuration 1=B 2=E 3=C
Package SOT-323
Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 20 30 30 3 35 10 mW 280 150 - 65 ... - 150 ≤ 155 °C mA Unit V
VCEO VCES VCBO VEBO IC IB Ptot Tj Tstg RthJS
TS ≤ 107 °C
Junction temperature Storage temperature Thermal Resistance Junction - soldering point
K/W
Semiconductor Group
1
Nov-28-1996
BF 799W
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit
V(BR)CEO
20 95 100 0.15 -
V
IC = 1 mA, IB = 0
Collector-base breakdown voltage
V(BR)CBO
30
IC = 10 µA, IE = 0
Base-emitter breakdown voltage
V(BR)EBO
3
IE = 10 µA, IC = 0
Collector-base cutoff current
ICBO
100
nA 35 40 250 V 0.5 0.95
VCB = 20 V, IE = 0
DC current gain
hFE
IC = 5 mA, VCE = 10 V IC = 20 mA, VCE = 10 V
Collector-emitter saturation voltage
VCEsat VBEsat
-
IC = 20 mA, IB = 2 mA
Base-emitter saturation voltage
IC = 20 mA, IB = 2 mA
Semiconductor Group
2
Nov-28-1996
BF 799W
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. AC Characteristics Transition frequency Values typ. max. Unit
fT
800 1100 0.7 0.28 0.96 -
MHz
IC = 5 mA, VCE = 10 V, f = 100 MHz IC = 20 mA, VCE = 8 V, f = 100 MHz
Collector-base capacitance
Ccb
-
pF
VCB = 10 V, VBE = vbe = 0 , f = 1 MHz
Collector-emitter capacitance
Cce
-
VCE = 10 V, VBE = vbe = 0 , f = 1 MHz
Output capacitance
Cob
-
VCB = 10 V, IE = 0 mA, f = 1 MHz
Noise figure
F
3 60 -
dB
IC = 5 mA, VCE = 10 V, f = 100 MHz ZS = 50 Ω
Output conductance
g22e
-
µS
IC = 20 mA, VCE = 10 V, f = 35 MHz
Semiconductor Group
3
Nov-28-1996
BF 799W
Total power dissipation Ptot = f (TA*, TS)
* Package mounted on epoxy
300 mW 260
Ptot
240 220 200 180 160 140 120 100 80 60 40 20 0 0
TS
TA
20
40
60
80
100
120 °C 150 TA ,TS
Permissible Pulse Load RthJS = f (tp)
Permissible Pulse Load Ptotmax/PtotDC = f (tp)
10 3
10 2
K/W
RthJS
10 2
Ptotmax/PtotDC D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0
10 1
10 0 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
10 s 10 tp
-1
0
10 0 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
10 s 10 tp
-1
0
Semiconductor Group
4
Nov-28-1996
BF 799W
Transition frequency fT = f (IC) f = 100MHz
VCE = Parameter
Collector-base capacitance Ccb = f (VCB) VBE = vbe = 0, f = 1MHz
Semiconductor Group
5
Nov-28-1996
.