BF620

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BF620; BF622 NPN high-voltage transistors Product specification Supersedes data of 1997 Apr 09 1999 Apr 21 Philips Semiconductors Product specification NPN high-voltage transistors FEATURES Low current (max. 50 mA) High voltage (max. 300 V). APPLICATIONS Video output stages. DESCRIPTION NPN high-voltage transistor in a SOT89 plastic package. PNP complements: BF621 and BF623. MARKING TYPE NUMBER BF620 BF622 MARKING CODE DC DA 1 Bottom view 2 3 handbook, halfpage BF620; BF622 PINNING PIN 1 2 3 emitter collector base DESCRIPTION 2 3 1 MAM296 Fig.1 Simplified outline (SOT89) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BF620 BF622 VCEO collector-emitter voltage BF620 BF622 VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2. For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”. emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open collector open-base − − − − − − − −65 − −65 300 250 5 50 100 50 1.25 +150 150 +150 V V V mA mA mA W °C °C °C PARAMETER collector-base voltage CONDITIONS open emitter − − 300 250 V V MIN. MAX. UNIT 1999 Apr 21 2 Phili...