NPN Silicon RF Transistor
q q
BF 599
Common emitter IF/RF amplifier Low feedback capacitance due to shield diffusion
...
NPN Silicon RF
Transistor
q q
BF 599
Common emitter IF/RF amplifier Low feedback capacitance due to shield diffusion
Type BF 599
Marking NB
Ordering Code (tape and reel) Q62702-F979
Pin Configuration 1 2 3 B E C
Package1) SOT-23
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation, TA ≤ 25 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Rth JA
≤
Symbol VCE0 VCB0 VEB0 IC IB Ptot Tj Tstg
Values 25 40 4 25 5 280 150 – 65 … + 150
Unit V
mA mW ˚C
450
K/W
1) 2)
For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm.
Semiconductor Group
1
07.94
BF 599
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector cutoff current VCB = 20 V, IE = 0 DC current gain IC = 7 mA, VCE = 10 V Collector-emitter saturation voltage IC = 10 mA, IB = 1 mA Base-emitter voltage IC = 7 mA, VCE = 10 V AC Characteristics Transition frequency IC = 5 mA, VCE = 10 V, f = 100 MHz Collector-base capacitance VCB = 10 V, VBE = 0 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, VBE = 0 V, f = 1 MHz Optimum power gain IC = 7 mA, VCE = 10 V, f = 35 MHz Forward transfer admittance IC = 7 mA, VCE = 10 V, f = 35 MHz fT Ccb Cce Gpe opt I y21e I – – – – – 550 0.35 0.68 43 175 – – – – – dB mS...
