DatasheetsPDF.com

BF591 Dataheets PDF



Part Number BF591
Manufacturers NXP
Logo NXP
Description NPN high-voltage transistors
Datasheet BF591 DatasheetBF591 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET M3D067 BF591; BF593 NPN high-voltage transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jul 02 Philips Semiconductors Product specification NPN high-voltage transistors FEATURES • Low current (max. 150 mA) • High voltage (max. 210 V). APPLICATIONS • Telephone systems. DESCRIPTION NPN high-voltage transistor in a TO-202; SOT128B plastic package. 3 handbook, halfpage BF591; BF593 PINNING PIN 1 2 .

  BF591   BF591


Document
DISCRETE SEMICONDUCTORS DATA SHEET M3D067 BF591; BF593 NPN high-voltage transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jul 02 Philips Semiconductors Product specification NPN high-voltage transistors FEATURES • Low current (max. 150 mA) • High voltage (max. 210 V). APPLICATIONS • Telephone systems. DESCRIPTION NPN high-voltage transistor in a TO-202; SOT128B plastic package. 3 handbook, halfpage BF591; BF593 PINNING PIN 1 2 3 emitter collector, connected to mounting base base DESCRIPTION 2 1 1 2 3 MAM305 Fig.1 Simplified outline (TO-202; SOT128B) and symbol. QUICK REFERENCE DATA SYMBOL VCBO BF591 BF593 VCEO collector-emitter voltage BF591 BF593 ICM Ptot hFE peak collector current total power dissipation DC current gain Tamb ≤ 55 °C IC = 20 mA; VCE = 5 V IC = 100 mA; VCE = 6 V open base − − − − 30 30 170 210 300 1.3 − − V V mA W PARAMETER collector-base voltage CONDITIONS open emitter − − 210 250 V V MIN. MAX. UNIT 1997 Jul 02 2 Philips Semiconductors Product specification NPN high-voltage transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BF591 BF593 VCEO collector-emitter voltage BF591 BF593 VEBO IC ICM IBM Ptot Tstg Tj Tamb emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 55 °C open collector open base − − − − − − − −65 − −65 PARAMETER collector-base voltage CONDITIONS open emitter − − MIN. BF591; BF593 MAX. 210 250 170 210 5 150 300 100 1.3 +150 150 +150 V V V V V UNIT mA mA mA W °C °C °C THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS VALUE 73 UNIT K/W thermal resistance from junction to ambient in free air CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS IE = 0; VCB = 60 V IE = 0; VCB = 60 V; Tj = 140 °C IC = 0; VEB = 5 V note 1 IC = 20 mA; VCE = 5 V IC = 100 mA; VCE = 6 V IC = 150 mA; VCE = 7 V Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.01. 30 30 20 − − − − − − MIN. 1 100 MAX. 50 UNIT nA µA nA 1997 Jul 02 3 Philips Semiconductors Product specification NPN high-voltage transistors PACKAGE OUTLINE BF591; BF593 Plastic single-ended leaded (through hole) package; with cooling fin, mountable to heatsink, 1 mounting hole; 3 leads (in-line) E1 P c1 SOT128B P1 HE D L2 L1 L 1 2 bp e1 e E 3 w M Q A c 0 DIMENSIONS (mm are the original dimensions) UNIT mm A 4.6 4.4 bp 0.8 0.6 c 0.65 0.5 c1 0.56 0.46 D 8.6 8.4 E 10.1 9.9 E1 10.4 10.0 e 5.08 5 scale e1 2.54 10 mm HE 24.2 23.8 L 13.3 12.2 L1 2.4 2.0 L2(1) max 2.5 P 3.8 3.6 P1 3.9 3.7 Q 1.7 1.5 w 0.25 Note 1. Plastic flash allowed within this zone OUTLINE VERSION SOT128B REFERENCES IEC JEDEC TO-202 EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 1997 Jul 02 4 Philips Semiconductors Product specification NPN high-voltage transistors DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values BF591; BF593 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Jul 02 5 Philips Semiconductors Product specification NPN high-voltage transistors NOTES BF591; BF593 1997 Jul 02 6 Philips Semiconductors Product specification NPN high-voltage transistors NOTES BF591; BF593 1997 Jul 02 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101, Fax. +43 1 60 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200.


BF588 BF591 BF593


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)