Document
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D067
BF591; BF593 NPN high-voltage transistors
Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jul 02
Philips Semiconductors
Product specification
NPN high-voltage transistors
FEATURES • Low current (max. 150 mA) • High voltage (max. 210 V). APPLICATIONS • Telephone systems. DESCRIPTION NPN high-voltage transistor in a TO-202; SOT128B plastic package.
3
handbook, halfpage
BF591; BF593
PINNING PIN 1 2 3 emitter collector, connected to mounting base base DESCRIPTION
2
1
1 2 3
MAM305
Fig.1
Simplified outline (TO-202; SOT128B) and symbol.
QUICK REFERENCE DATA SYMBOL VCBO BF591 BF593 VCEO collector-emitter voltage BF591 BF593 ICM Ptot hFE peak collector current total power dissipation DC current gain Tamb ≤ 55 °C IC = 20 mA; VCE = 5 V IC = 100 mA; VCE = 6 V open base − − − − 30 30 170 210 300 1.3 − − V V mA W PARAMETER collector-base voltage CONDITIONS open emitter − − 210 250 V V MIN. MAX. UNIT
1997 Jul 02
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Philips Semiconductors
Product specification
NPN high-voltage transistors
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BF591 BF593 VCEO collector-emitter voltage BF591 BF593 VEBO IC ICM IBM Ptot Tstg Tj Tamb emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 55 °C open collector open base − − − − − − − −65 − −65 PARAMETER collector-base voltage CONDITIONS open emitter − − MIN.
BF591; BF593
MAX. 210 250 170 210 5 150 300 100 1.3 +150 150 +150 V V V V V
UNIT
mA mA mA W °C °C °C
THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS VALUE 73 UNIT K/W
thermal resistance from junction to ambient in free air
CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS IE = 0; VCB = 60 V IE = 0; VCB = 60 V; Tj = 140 °C IC = 0; VEB = 5 V note 1 IC = 20 mA; VCE = 5 V IC = 100 mA; VCE = 6 V IC = 150 mA; VCE = 7 V Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.01. 30 30 20 − − − − − − MIN. 1 100 MAX. 50 UNIT nA µA nA
1997 Jul 02
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Philips Semiconductors
Product specification
NPN high-voltage transistors
PACKAGE OUTLINE
BF591; BF593
Plastic single-ended leaded (through hole) package; with cooling fin, mountable to heatsink, 1 mounting hole; 3 leads (in-line)
E1 P c1
SOT128B
P1
HE
D
L2
L1
L
1
2
bp e1 e E
3
w M Q A c
0 DIMENSIONS (mm are the original dimensions) UNIT mm A 4.6 4.4 bp 0.8 0.6 c 0.65 0.5 c1 0.56 0.46 D 8.6 8.4 E 10.1 9.9 E1 10.4 10.0 e 5.08
5 scale e1 2.54
10 mm
HE 24.2 23.8
L 13.3 12.2
L1 2.4 2.0
L2(1) max 2.5
P 3.8 3.6
P1 3.9 3.7
Q 1.7 1.5
w 0.25
Note 1. Plastic flash allowed within this zone OUTLINE VERSION SOT128B REFERENCES IEC JEDEC TO-202 EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28
1997 Jul 02
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Philips Semiconductors
Product specification
NPN high-voltage transistors
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values
BF591; BF593
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1997 Jul 02
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Philips Semiconductors
Product specification
NPN high-voltage transistors
NOTES
BF591; BF593
1997 Jul 02
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Philips Semiconductors
Product specification
NPN high-voltage transistors
NOTES
BF591; BF593
1997 Jul 02
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