BF588

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D067 BF588 PNP high-voltage transistor Product specification Supersedes data of 1996 Dec 09 1999 Apr 12 Philips Semiconductors Product specification PNP high-voltage transistor FEATURES Low feedback capacitance. APPLICATIONS For use in video output stages of black and white and colour television receivers. DESCRIPTION PNP transistor in a TO-202 plastic package. NPN complements: BF585 and BF587. PINNING 1 2 3 3 handbook, halfpage BF588 2 1 PIN 1 2 3 emitter collector base DESCRIPTION MBH792 Fig.1 Simplified outline (TO-202) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C Tmb ≤ 25 °C CONDITIONS open emitter open base open collector − − − − − − − − −65 − −65 MIN. MAX. −350 −350 −5 −100 −200 −100 1.6 5 +150 150 +150 V V V mA mA mA W W °C °C °C UNIT 1999 Apr 12 2 Philips Semiconductors Product specification PNP high-voltage transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-mb PARAMETER thermal resistance from junction to ambient thermal resistance from junction to mounting base VALUE 78 25 BF588 UNIT K/W K/W CHARACTERISTICS Tj = 25 °C unless otherwise spec...