BF585

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D067 BF585; BF587 NPN high-voltage transistors Product specification Supersedes data of 1996 Dec 09 1999 Apr 21 Philips Semiconductors Product specification NPN high-voltage transistors FEATURES Low feedback capacitance. APPLICATIONS For use in video output stages of black and white and colour television receivers. DESCRIPTION NPN transistors in a TO-202; SOT128B plastic package. PNP complement: BF588. PINNING PIN 1 2 3 emitter collector base DESCRIPTION Fig.1 handbook, halfpage BF585; BF587 2 3 1 1 2 3 MBH793 Simplified outline (TO-202; SOT128B) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BF585 BF587 VCEO collector-emitter voltage BF585 BF587 VEBO IC ICM IBM Ptot Tstg Tj Tamb emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature in free air; Tamb ≤ 25 °C in free air; Tmb ≤ 25 °C open collector open base − − − − − − − − −65 − −65 300 350 5 100 200 100 1.6 5 +150 150 +150 V V V mA mA mA W W °C °C °C PARAMETER collector-base voltage CONDITIONS open emitter − − 350 400 V V MIN. MAX. UNIT 1999 Apr 21 2 Philips Semiconductors Product specification NPN high-voltage transistors THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-mb PARAMETER thermal resistance from junction to ambient thermal resistance from junction to mounting bas...