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BF569W

Siemens Semiconductor Group

PNP Silicon RF Transistor

BF 569W PNP Silicon RF Transistor kein Status • For oscillators, mixer and self-oscillating mixer stages in UHF TV-tuner...


Siemens Semiconductor Group

BF569W

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Description
BF 569W PNP Silicon RF Transistor kein Status For oscillators, mixer and self-oscillating mixer stages in UHF TV-tuner Type BF 569W Marking Ordering Code LHs Q62702-F1582 Pin Configuration 1=B 2=E 3=C Package SOT-323 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 35 40 3 30 5 mW 280 150 - 65 ... + 150 °C mA Unit V VCEO VCBO VEBO IC IB Ptot Tj Tstg TS ≤ 93 °C Junction temperature Storage temperature Thermal Resistance Junction - soldering point RthJS ≤ 205 K/W Semiconductor Group 1 Nov-28-1996 BF 569W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 35 50 - V nA 100 20 - IC = 1 mA, IB = 0 Collector-base cutoff current ICBO hFE VCB = 20 , IE = 0 DC current gain IC = 3 mA, VCE = 10 V AC Characteristics Transition frequency fT 950 0.32 0.15 - MHz pF dB 4.5 - IC = 30 mA, VCE = 10 V, f = 100 MHz Collector-base capacitance Ccb Cce - VCB = 10 V, VBE = vbe = 0 , f = 1 MHz Collector-emitter capacitance VCE = 10 V, VBE = vbe = 0 , f = 1 MHz Noise figure F IC = 3 mA, VCE = 10 V, f = 800 MHz ZS = 60 Ω Cannon-base power gain Gp 14.8 - IC = 3 mA, VCB = 10 V, f = 800 MHz RL = 500 Ω Semiconductor Group 2 Nov-28-1996 BF 569W Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy 300 mW Ptot 200 T...




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