BLF2425M7L250P; BLF2425M7LS250P
Power LDMOS transistor
Rev. 5 — 1 September 2015
Product data sheet
1. Product profile...
BLF2425M7L250P; BLF2425M7LS250P
Power LDMOS
transistor
Rev. 5 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
250 W LDMOS power
transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz.
The BLF2425M7L250P and BLF2425M7LS250P are designed for high-power CW applications and are assembled in high performance ceramic packages, available in eared and earless versions
Table 1. Typical performance
RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Test signal
f
VDS
PL(AV)
Gp
(MHz)
(V) (W)
(dB)
CW
2450
28 250
15
D (%) 51
1.2 Features and benefits
High efficiency Easy power control Excellent ruggedness Excellent thermal stability Integrated ESD protection Designed for broadband operation (2400 MHz to 2500 MHz) Internally matched Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1....