BLF2425M7L140

BLF2425M7L140; BLF2425M7LS140 Power LDMOS transistor Rev. 4 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz. The BLF2425M7L140 and BLF2425M7LS140 are designed for high-power CW applications and are assembled in high performance ceramic packages, available in eared and earless versions Table 1. Typical performance Typical RF performance at Tcase = 25 C; IDq = 1300 mA in a common source class-AB production test circuit. Test signal f (MHz) VDS PL(AV) (V) (W) Gp (dB) D (%) CW 2450 28 140 18.5 52 1.2 Features and benefits  High efficiency  High power gain  Excellent ruggedness  Excellent thermal stability  Integrated ESD protection  Designed for broadband operation (2400 MHz to 2500 MHz)  Internally matched  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substa...