BLF0910H9LS600

BLF0910H9LS600 Power LDMOS transistor Rev. 2 — 22 June 2018 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS power transistor for industrial applications at frequency of 915 MHz. The BLF0910H9LS600 is designed for high-power CW applications and is assembled in a high performance ceramic package. Table 1. Typical performance RF performance at VDS = 50 V; IDq = 90 mA in a class-AB application circuit. Test signal f VDS PL Gp (MHz) (V) (W) (dB) CW 915 50 600 19.8 ηD (%) 68.5 1.2 Features and benefits  High efficiency  Easy power control  Excellent ruggedness  Integrated ESD protection  Designed for broadband operation (900 MHz to 930 MHz)  Internally input matched  For RoHS compliance see the product details on the Ampleon website 1.3 Applications  Industrial applications in the 915 MHz ISM band BLF0910H9LS600 Power LDMOS transistor 2. Pinning information Table 2. Pin 1 2 3 Pinning Description drain gate source [1] Connected to flange. 3. Ordering information Simplified outline Graphic symbol 1 [1] 3 2 1 2 3 sym112 Table 3. Ordering information Type number Package Name Description BLF0910H9LS600 - earless flanged ceramic package; 2 leads Version SOT502B 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Min VDS drain-source voltage VGS gate-source voltage Tstg storage temperature Tj junction temperature 6 65 [1] - Max 106 +11 +15...