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BLF888DS

Ampleon

Power LDMOS transistor

BLF888D; BLF888DS UHF power LDMOS transistor Rev. 4 — 18 February 2016 Product data sheet 1. Product profile 1.1 Gene...


Ampleon

BLF888DS

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Description
BLF888D; BLF888DS UHF power LDMOS transistor Rev. 4 — 18 February 2016 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast Doherty transmitter applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Table 1. Application information RF performance at VDS = 50 V in an ultra wide Doherty application. Test signal f PL(AV) Gp D (MHz) (W) (dB) (%) DVB-T (8k OFDM) 470 to 860 115 to 134 [1] 17 40 to 48 [1] IMDshldr (dBc) 38 to 44 [2] PAR (dB) 8 [3] [1] Depending on selected channel. [2] Depending on exciter used. [3] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on CCDF. 1.2 Features and benefits  High efficiency  High power gain  Excellent ruggedness (VSWR  40 : 1 through all phases)  Excellent thermal stability  Integrated ESD protection  One Doherty design covers the...




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