BLF573

BLF573; BLF573S HF / VHF power LDMOS transistor Rev. 4 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band. Table 1. Production test information Mode of operation f VDS PL Gp D (MHz) (V) (W) (dB) (%) CW 225 50 300 27.2 70 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits  Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 900 mA:  Average output power = 300 W  Power gain = 27.2 dB  Efficiency = 70 %  Easy power control  Integrated ESD protection  Excellent ruggedness  High efficiency  Excellent thermal stability  Designed for broadband operation (HF and VHF band)  Compliant to Directive 2002/95/EC, regarding Restriction of Ha...