BLF174XR; BLF174XRS
Power LDMOS transistor
Rev. 2 — 1 September 2015
Product data sheet
1. Product profile
1.1 Gener...
BLF174XR; BLF174XRS
Power LDMOS
transistor
Rev. 2 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
A 600 W extremely rugged LDMOS power
transistor for broadcast and industrial applications in the HF to 128 MHz band.
Table 1. Application information
Test signal
f
(MHz)
CW 108
pulsed RF
108
VDS
PL
Gp
(V) (W) (dB)
50 600 28.5
50 600 29
D (%) 74 73
1.2 Features and benefits
Easy power control Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (HF to 128 MHz) Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Industrial, scientific and medical applications Broadcast transmitter applications
BLF174XR; BLF174XRS
Power LDMOS
transistor
2. Pinning information
Table 2. Pinning Pin Description BLF174XR (SOT1214A) 1 drain1 2 drain2 3 gate1 4 gate2 5 source
BLF174XRS (SOT1214B) 1...
