BLF6G13L-250P

BLF6G13L-250P; BLF6G13LS-250P(G) Power LDMOS transistor Rev. 5. — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor intended for CW applications at a frequency of 1.3 GHz. Table 1. Test information Typical RF performance at Tcase = 25 C; IDq = 100 mA; in a class-AB production test circuit. Test signal f VDS PL(1dB) Gp D (GHz) (V) (W) (dB) (%) CW 1.3 50 250 17 56 1.2 Features and benefits  Easy power control  Integrated ESD protection  Excellent ruggedness  High efficiency  Excellent thermal stability  Internally matched for ease of use  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications  Industrial, scientific and medical applications BLF6G13L(S)-250P(G) Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description BLF6G13L-250P (SOT1121A) 1 drain1 2 drain2 3 gate1 4 gate2 5 source BLF6G13LS-250P (SOT11...