BLP8G27-5
Power LDMOS transistor
Rev. 2 — 1 October 2015
Product data sheet
1. Product profile
1.1 General descriptio...
BLP8G27-5
Power LDMOS
transistor
Rev. 2 — 1 October 2015
Product data sheet
1. Product profile
1.1 General description
5 W plastic LDMOS power
transistor for base station applications at frequencies from 700 MHz to 2700 MHz.
Table 1. Application performance (multiple frequencies) Typical RF performance at Tcase = 25 C; IDq = 55 mA; in a class-AB application circuit.
Test signal
f
IDq
VDS PL(AV)
Gp
D
ACPR5M
(MHz) (mA) (V) (dBm) (dB) (%) (dBc)
2-carrier W-CDMA
2700
55
28 28.8 19 19 50
[1] Test signal: 2-carrier W-CDMA; test model 1; 10 MHz carrier spacing (mode 101); PAR = 8.3 dB at 0.01% probability on CCDF (46 % clipping).
1.2 Features and benefits
High efficiency Excellent ruggedness Designed for broadband operation Excellent thermal stability High power gain Integrated ESD protection Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
CDMA W-CDMA GSM EDGE MC-...
