BLP8G21S-160PV
Power LDMOS transistor
Rev. 5 — 28 September 2015
Product data sheet
1. Product profile
1.1 General description
160 W LDMOS transistor for base station applications at frequencies from 1880 MHz to 2025 MHz.
Table 1. Typical performance Typical RF performance per section at Tcase = 25 C in a common source class-AB production test circuit.
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