Document
BLP8G20S-80P
Power LDMOS transistor
Rev. 4 — 6 April 2016
Product data sheet
1. Product profile
1.1 General description
80 W LDMOS transistor for base station applications at frequencies from 1800 MHz to 2200 MHz.
Table 1. Typical performance Typical RF performance per section at Tcase = 25 C in a common Doherty demo board.
Test signal
f
IDq
VDS PL(AV) Gp
D ACPR
(MHz)
(mA) (V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA
1805 to 1880
300 28 14.2 17 47 30 [1]
1880 to 1920
300 28 14.2 16.8 46 30 [1]
2110 to 2170
300 28 14.2 16 43 30 [1]
[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; carrier spacing = 5 MHz.
1.2 Features and benefits
Designed for broadband operation (1800 MHz to 2200 MHz) Excellent ruggedness High efficiency Excellent thermal stability Internally matched for ease of use High power gain Integrated ESD protection Compliant to Directive 2002/95/EC, regarding Restriction of .